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Article: Decomposition of positron lifetime spectra generated by Monte Carlo method: The case study of 6H silicon carbide

TitleDecomposition of positron lifetime spectra generated by Monte Carlo method: The case study of 6H silicon carbide
Authors
Keywords6H silicon carbide
Monte Carlo simulation
Positron lifetime spectroscopy
Vacancy
Issue Date2006
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/nimb
Citation
Nuclear Instruments And Methods In Physics Research, Section B: Beam Interactions With Materials And Atoms, 2006, v. 251 n. 2, p. 479-483 How to Cite?
Abstract6H silicon carbide positron lifetime spectra consisting of different concentrations of carbon vacancy, silicon vacancy and divacancy were generated by Monte Carlo simulation. Although the lifetime spectra contained more than one defect, they were well fitted by the two component model with good chi squares. Artificial defect components were found to form by the merging of the different vacancy defects. For some of these cases, the invalidity of the simple trapping model could not be revealed by the commonly used τ b,mod test. This would lead to the mis-identification of virtual vacancy defects having characteristic lifetimes depending on the concentrations of the carbon vacancy, the silicon vacancy and the divacancy. © 2006 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/81014
ISSN
2023 Impact Factor: 1.4
2023 SCImago Journal Rankings: 0.366
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLam, CHen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2010-09-06T08:12:47Z-
dc.date.available2010-09-06T08:12:47Z-
dc.date.issued2006en_HK
dc.identifier.citationNuclear Instruments And Methods In Physics Research, Section B: Beam Interactions With Materials And Atoms, 2006, v. 251 n. 2, p. 479-483en_HK
dc.identifier.issn0168-583Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/81014-
dc.description.abstract6H silicon carbide positron lifetime spectra consisting of different concentrations of carbon vacancy, silicon vacancy and divacancy were generated by Monte Carlo simulation. Although the lifetime spectra contained more than one defect, they were well fitted by the two component model with good chi squares. Artificial defect components were found to form by the merging of the different vacancy defects. For some of these cases, the invalidity of the simple trapping model could not be revealed by the commonly used τ b,mod test. This would lead to the mis-identification of virtual vacancy defects having characteristic lifetimes depending on the concentrations of the carbon vacancy, the silicon vacancy and the divacancy. © 2006 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/nimben_HK
dc.relation.ispartofNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atomsen_HK
dc.rightsNuclear Instruments & Methods in Physics Research Section B Beam Interactions with Materials and Atoms. Copyright © Elsevier BV.en_HK
dc.subject6H silicon carbideen_HK
dc.subjectMonte Carlo simulationen_HK
dc.subjectPositron lifetime spectroscopyen_HK
dc.subjectVacancyen_HK
dc.titleDecomposition of positron lifetime spectra generated by Monte Carlo method: The case study of 6H silicon carbideen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0168-9002&volume=251&spage=479&epage=483&date=2006&atitle=Decomposition+of+positron+lifetime+spectra+generated+by+Monte+Carlo+method:+The+case+study+of+6H+silicon+carbideen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.nimb.2006.06.029en_HK
dc.identifier.scopuseid_2-s2.0-33749421511en_HK
dc.identifier.hkuros124138en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33749421511&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume251en_HK
dc.identifier.issue2en_HK
dc.identifier.spage479en_HK
dc.identifier.epage483en_HK
dc.identifier.isiWOS:000241547100025-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridLam, CH=24525955200en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.issnl0168-583X-

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