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Article: Liquid encapsulated Czochralski grown undoped p-type gallium antimonide studied by temperature-dependent Hall measurement

TitleLiquid encapsulated Czochralski grown undoped p-type gallium antimonide studied by temperature-dependent Hall measurement
Authors
Issue Date2005
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 2005, v. 20 n. 12, p. 1157-1161 How to Cite?
AbstractLiquid encapsulated Czochralski grown undoped p-type GaSb samples were studied by temperature-dependent Hall measurement. A shallow acceptor having an ionization energy of 32 meV was found to be the important residual acceptor associated with the p-type conduction of the undoped GaSb material. The carrier mobility data were fitted well by the relaxation time approximation model involving various carrier scattering processes. Other than the typical important scattering processes in limiting the carrier mobility in III-V semiconductors (i.e. ionized impurity, acoustic phonon, polar optical phonon and non-polar optical phonon), vacancy scattering has to be included so as to give a good fit to the experimental data. The concentrations of the vacancy and the 32 meV acceptor in the electron irradiated samples were found to increase significantly upon annealing, but such increase was not found in the non-irradiated sample. © 2005 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/81008
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLui, MKen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2010-09-06T08:12:43Z-
dc.date.available2010-09-06T08:12:43Z-
dc.date.issued2005en_HK
dc.identifier.citationSemiconductor Science And Technology, 2005, v. 20 n. 12, p. 1157-1161en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81008-
dc.description.abstractLiquid encapsulated Czochralski grown undoped p-type GaSb samples were studied by temperature-dependent Hall measurement. A shallow acceptor having an ionization energy of 32 meV was found to be the important residual acceptor associated with the p-type conduction of the undoped GaSb material. The carrier mobility data were fitted well by the relaxation time approximation model involving various carrier scattering processes. Other than the typical important scattering processes in limiting the carrier mobility in III-V semiconductors (i.e. ionized impurity, acoustic phonon, polar optical phonon and non-polar optical phonon), vacancy scattering has to be included so as to give a good fit to the experimental data. The concentrations of the vacancy and the 32 meV acceptor in the electron irradiated samples were found to increase significantly upon annealing, but such increase was not found in the non-irradiated sample. © 2005 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.titleLiquid encapsulated Czochralski grown undoped p-type gallium antimonide studied by temperature-dependent Hall measurementen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0268-1242&volume=20&spage=1157&epage=1161&date=2005&atitle=Liquid+encapsulated+Czochralski+grown+undoped+p-type+gallium+antimonide+studied+by+temperature-dependent+Hall+measurementen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0268-1242/20/12/002en_HK
dc.identifier.scopuseid_2-s2.0-27844610207en_HK
dc.identifier.hkuros110790en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-27844610207&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume20en_HK
dc.identifier.issue12en_HK
dc.identifier.spage1157en_HK
dc.identifier.epage1161en_HK
dc.identifier.isiWOS:000234186000007-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLui, MK=7004991693en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.citeulike381213-

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