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Article: Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

TitleDefect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy
Authors
KeywordsAnnealing
Diffusion
Fluorine
Gallium compounds
III-V semiconductors
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2009, v. 94 n. 6 How to Cite?
AbstractDefect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (VGa) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180 keV with a dose of 1× 10 15 cm -2. Implantation-induced VGa tend to aggregate and form vacancy clusters after postimplantation annealing in N 2 ambient at 600 °C. Fluorine ions tend to form F-vacancy complexes quickly after thermal annealing, which is consistent with the proposed diffusion model that predicts the behaviors of fluorine in GaN. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/81006
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
Funding AgencyGrant Number
Hong Kong Research Grant Council611706
Funding Information:

The authors are grateful to Dr. F. J. Xu and Professor B. Shen of Peking University for providing the GaN wafer used in this work. This work was supported by the Hong Kong Research Grant Council under the competitive earmarked research Grant No. 611706.

References

 

DC FieldValueLanguage
dc.contributor.authorWang, MJen_HK
dc.contributor.authorYuan, Len_HK
dc.contributor.authorCheng, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorChen, KJen_HK
dc.date.accessioned2010-09-06T08:12:42Z-
dc.date.available2010-09-06T08:12:42Z-
dc.date.issued2009en_HK
dc.identifier.citationApplied Physics Letters, 2009, v. 94 n. 6en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81006-
dc.description.abstractDefect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (VGa) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180 keV with a dose of 1× 10 15 cm -2. Implantation-induced VGa tend to aggregate and form vacancy clusters after postimplantation annealing in N 2 ambient at 600 °C. Fluorine ions tend to form F-vacancy complexes quickly after thermal annealing, which is consistent with the proposed diffusion model that predicts the behaviors of fluorine in GaN. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectAnnealing-
dc.subjectDiffusion-
dc.subjectFluorine-
dc.subjectGallium compounds-
dc.subjectIII-V semiconductors-
dc.titleDefect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=94&issue=6, article no. 061910&spage=&epage=&date=2009&atitle=Defect+formation+and+annealing+behaviors+of+fluorine-implanted+GaN+layers+revealed+by+positron+annihilation+spectroscopyen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3081019en_HK
dc.identifier.scopuseid_2-s2.0-60349093692en_HK
dc.identifier.hkuros169470en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-60349093692&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume94en_HK
dc.identifier.issue6en_HK
dc.identifier.isiWOS:000263409400037-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, MJ=13104393900en_HK
dc.identifier.scopusauthoridYuan, L=26031133300en_HK
dc.identifier.scopusauthoridCheng, CC=23003304100en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridChen, KJ=10142978900en_HK

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