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Article: Novel model for the optical function of GaN

TitleNovel model for the optical function of GaN
Authors
Issue Date2002
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2002, v. 74 n. 5, p. 669-674 How to Cite?
AbstractIn this work we propose an analytical expression for the complex dielectric function which includes both discrete and continuum exciton effects. We have introduced Lorentzian broadening into Elliott's formula. The introduction of broadening leads to equations for the dielectric function containing only elementary functions. We have applied the proposed model to the dielectric function of wurtzite GaN in the spectral region 1-10 eV. Excellent agreement with the experimental data has been obtained. We show that the Lorentzian-broadened dielectric function decays more slowly than the experimental data for hexagonal GaN at the low-energy side. This indicates that the broadening of the absorption edge in GaN is not purely Lorentzian. The agreement with the experimental data can be improved using adjustable broadening modification.
Persistent Identifierhttp://hdl.handle.net/10722/81003
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorChan, Yen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2010-09-06T08:12:40Z-
dc.date.available2010-09-06T08:12:40Z-
dc.date.issued2002en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2002, v. 74 n. 5, p. 669-674en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81003-
dc.description.abstractIn this work we propose an analytical expression for the complex dielectric function which includes both discrete and continuum exciton effects. We have introduced Lorentzian broadening into Elliott's formula. The introduction of broadening leads to equations for the dielectric function containing only elementary functions. We have applied the proposed model to the dielectric function of wurtzite GaN in the spectral region 1-10 eV. Excellent agreement with the experimental data has been obtained. We show that the Lorentzian-broadened dielectric function decays more slowly than the experimental data for hexagonal GaN at the low-energy side. This indicates that the broadening of the absorption edge in GaN is not purely Lorentzian. The agreement with the experimental data can be improved using adjustable broadening modification.en_HK
dc.languageengen_HK
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.titleNovel model for the optical function of GaNen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0947-8396&volume=74&spage=669&epage=674&date=2002&atitle=Novel+model+for+the+optical+function+of+GaNen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s003390100936en_HK
dc.identifier.scopuseid_2-s2.0-0036568618en_HK
dc.identifier.hkuros65902en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036568618&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume74en_HK
dc.identifier.issue5en_HK
dc.identifier.spage669en_HK
dc.identifier.epage674en_HK
dc.identifier.isiWOS:000174673400012-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridChan, Y=8250546500en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK

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