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Article: Two post-breakdown metastable phases in semi-insulating GaAs

TitleTwo post-breakdown metastable phases in semi-insulating GaAs
Authors
KeywordsA. Metastability
Breakdown
SI-GaAs
Issue Date2002
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 2002, v. 123 n. 3-4, p. 123-127 How to Cite?
AbstractA room temperature electrically induced metastability in semi-insulating (SI)-GaAs has recently been reported in which the normally high resistivity state of SI-GaAs converts into a low resistance state when breakdown electric fields are applied to the metal/SI-GaAs/metal system. The present study finds that this post-breakdown metastable state can be classified into two metastable phases, namely a metastable high current phase and a metastable low current phase. This effect resembles the poorly understood 'lock-on' effect utilized in high power photoconductive semiconductor switches. It is argued that instead of a short pulse of light photo-ionizing the SI-GaAs and causing a carrier avalanche current that does not 'switch off' at low biases, the same avalanche current and effects are being brought about by the electrical breakdown of the sample. © 2002 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80996
ISSN
2015 Impact Factor: 1.458
2015 SCImago Journal Rankings: 0.776
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLuo, YLen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-06T08:12:35Z-
dc.date.available2010-09-06T08:12:35Z-
dc.date.issued2002en_HK
dc.identifier.citationSolid State Communications, 2002, v. 123 n. 3-4, p. 123-127en_HK
dc.identifier.issn0038-1098en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80996-
dc.description.abstractA room temperature electrically induced metastability in semi-insulating (SI)-GaAs has recently been reported in which the normally high resistivity state of SI-GaAs converts into a low resistance state when breakdown electric fields are applied to the metal/SI-GaAs/metal system. The present study finds that this post-breakdown metastable state can be classified into two metastable phases, namely a metastable high current phase and a metastable low current phase. This effect resembles the poorly understood 'lock-on' effect utilized in high power photoconductive semiconductor switches. It is argued that instead of a short pulse of light photo-ionizing the SI-GaAs and causing a carrier avalanche current that does not 'switch off' at low biases, the same avalanche current and effects are being brought about by the electrical breakdown of the sample. © 2002 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_HK
dc.relation.ispartofSolid State Communicationsen_HK
dc.subjectA. Metastabilityen_HK
dc.subjectBreakdownen_HK
dc.subjectSI-GaAsen_HK
dc.titleTwo post-breakdown metastable phases in semi-insulating GaAsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0038-1098&volume=123&spage=123&epage=127&date=2002&atitle=Two+post-breakdown+metastable+phases+in+semi-insulating+GaAs+en_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0038-1098(02)00224-7en_HK
dc.identifier.scopuseid_2-s2.0-0036646347en_HK
dc.identifier.hkuros74833en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036646347&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume123en_HK
dc.identifier.issue3-4en_HK
dc.identifier.spage123en_HK
dc.identifier.epage127en_HK
dc.identifier.isiWOS:000177577800008-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLuo, YL=55187936600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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