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Article: Spatial characterization of a 2 in GaN wafer by Raman spectroscopy and capacitance-voltage measurements

TitleSpatial characterization of a 2 in GaN wafer by Raman spectroscopy and capacitance-voltage measurements
Authors
Issue Date2004
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd
Citation
Journal Of Physics D: Applied Physics, 2004, v. 37 n. 20, p. 2814-2818 How to Cite?
AbstractMicro-Raman spectroscopy and capacitance-voltage (C-V) measurements have been used to investigate 2 in GaN epitaxial wafers grown by hydride vapour phase epitaxy on sapphire substrates. The position and line shape of the A 1 longitudinal optical (LO) phonon mode were used to determine the carrier concentration at different locations across the wafer. The line-shape fitting of the Raman A 1 (LO) coupled modes taken from horizontal lateral-different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. These data compare well with a carrier density map of the wafer obtained by C-V measurements, confirming the non-uniform distribution of carrier concentration in the GaN epitaxial film and that Raman spectroscopy of the LO phonon-plasmon mode can be used as a reliable and production friendly wafer quality test for GaN wafer manufacturing processes.
Persistent Identifierhttp://hdl.handle.net/10722/80987
ISSN
2015 Impact Factor: 2.772
2015 SCImago Journal Rankings: 0.682
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2010-09-06T08:12:29Z-
dc.date.available2010-09-06T08:12:29Z-
dc.date.issued2004en_HK
dc.identifier.citationJournal Of Physics D: Applied Physics, 2004, v. 37 n. 20, p. 2814-2818en_HK
dc.identifier.issn0022-3727en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80987-
dc.description.abstractMicro-Raman spectroscopy and capacitance-voltage (C-V) measurements have been used to investigate 2 in GaN epitaxial wafers grown by hydride vapour phase epitaxy on sapphire substrates. The position and line shape of the A 1 longitudinal optical (LO) phonon mode were used to determine the carrier concentration at different locations across the wafer. The line-shape fitting of the Raman A 1 (LO) coupled modes taken from horizontal lateral-different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. These data compare well with a carrier density map of the wafer obtained by C-V measurements, confirming the non-uniform distribution of carrier concentration in the GaN epitaxial film and that Raman spectroscopy of the LO phonon-plasmon mode can be used as a reliable and production friendly wafer quality test for GaN wafer manufacturing processes.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpden_HK
dc.relation.ispartofJournal of Physics D: Applied Physicsen_HK
dc.titleSpatial characterization of a 2 in GaN wafer by Raman spectroscopy and capacitance-voltage measurementsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-3727&volume=37&spage=2814&epage=2818&date=2004&atitle=Spatial+characterization+of+a+2+in+GaN+wafer+by+Raman+spectroscopy+and+capacitance-voltage+measurementsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0022-3727/37/20/007en_HK
dc.identifier.scopuseid_2-s2.0-7044286421en_HK
dc.identifier.hkuros96352en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-7044286421&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume37en_HK
dc.identifier.issue20en_HK
dc.identifier.spage2814en_HK
dc.identifier.epage2818en_HK
dc.identifier.isiWOS:000225028500008-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridHuang, Y=26643004400en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK

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