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Article: Investigation of residual donor defects in undoped and Fe-doped LEC InP

TitleInvestigation of residual donor defects in undoped and Fe-doped LEC InP
Authors
KeywordsDonor defect
Indium phosphide
Semi-insulating
Issue Date2002
PublisherLondon Corn Circular.
Citation
Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2002, v. 23 n. 5, p. 455-458 How to Cite?
AbstractThe free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy. Evidence of the existence of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-doped InP materials can be observed with infrared absorption spectra. The concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe2+ concentration in Fe-doped semi-insulating (SI) InP. These results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown LEC InP, and that it has significant influence on the compensation in Fe-doped SI InP.
Persistent Identifierhttp://hdl.handle.net/10722/80984
ISSN
2011 SCImago Journal Rankings: 0.140
References

 

DC FieldValueLanguage
dc.contributor.authorZhao, Yen_HK
dc.contributor.authorSun, Nen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorSun, Ten_HK
dc.contributor.authorLin, Len_HK
dc.date.accessioned2010-09-06T08:12:27Z-
dc.date.available2010-09-06T08:12:27Z-
dc.date.issued2002en_HK
dc.identifier.citationPan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2002, v. 23 n. 5, p. 455-458en_HK
dc.identifier.issn0253-4177en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80984-
dc.description.abstractThe free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy. Evidence of the existence of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-doped InP materials can be observed with infrared absorption spectra. The concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe2+ concentration in Fe-doped semi-insulating (SI) InP. These results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown LEC InP, and that it has significant influence on the compensation in Fe-doped SI InP.en_HK
dc.languageengen_HK
dc.publisherLondon Corn Circular.en_HK
dc.relation.ispartofPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductorsen_HK
dc.subjectDonor defecten_HK
dc.subjectIndium phosphideen_HK
dc.subjectSemi-insulatingen_HK
dc.titleInvestigation of residual donor defects in undoped and Fe-doped LEC InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0899-9988&volume=23&spage=455&epage=458&date=2002&atitle=Investigation+of+residual+donor+defects+in+undoped+and+Fe-doped+LEC+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0036587668en_HK
dc.identifier.hkuros72641en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036587668&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume23en_HK
dc.identifier.issue5en_HK
dc.identifier.spage455en_HK
dc.identifier.epage458en_HK
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridZhao, Y=7406633326en_HK
dc.identifier.scopusauthoridSun, N=7202556986en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridSun, T=7402922751en_HK
dc.identifier.scopusauthoridLin, L=7404131111en_HK

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