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Article: Growth of uniform tungsten oxide nanowires with small diameter via a two-step heating process

TitleGrowth of uniform tungsten oxide nanowires with small diameter via a two-step heating process
Authors
KeywordsA1. SEM
A1. XRD
A3. Thermal evaporation
B1. Tungsten oxide
Issue Date2007
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 2007, v. 306 n. 2, p. 395-399 How to Cite?
AbstractUniform tungsten oxide nanowires with small diameter have been fabricated with potassium hydroxide as catalyst on a tungsten plate and by the method of thermal evaporation via a unique two-step heating process. Typical temperatures of this two-step process are 390 and 610 °C, respectively. The first-step heating was found crucial for the growth of small and uniform nanowires because it made the potassium hydroxide solution more uniformly distributed on the tungsten plate surface. The structure and composition of the grown nanowires were characterized by various methods. The diameter of the nanowires ranges from 30-200 nm and the length is up to several tens of micrometers. The structure of the nanowires is found to be orthorhombic tungsten oxide (W3O8), with cell parameters a=1.035 nm, b=1.399 nm, c=0.378 nm. © 2007 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80971
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHu, Ren_HK
dc.contributor.authorWu, Hen_HK
dc.contributor.authorHong, Ken_HK
dc.date.accessioned2010-09-06T08:12:18Z-
dc.date.available2010-09-06T08:12:18Z-
dc.date.issued2007en_HK
dc.identifier.citationJournal Of Crystal Growth, 2007, v. 306 n. 2, p. 395-399en_HK
dc.identifier.issn0022-0248en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80971-
dc.description.abstractUniform tungsten oxide nanowires with small diameter have been fabricated with potassium hydroxide as catalyst on a tungsten plate and by the method of thermal evaporation via a unique two-step heating process. Typical temperatures of this two-step process are 390 and 610 °C, respectively. The first-step heating was found crucial for the growth of small and uniform nanowires because it made the potassium hydroxide solution more uniformly distributed on the tungsten plate surface. The structure and composition of the grown nanowires were characterized by various methods. The diameter of the nanowires ranges from 30-200 nm and the length is up to several tens of micrometers. The structure of the nanowires is found to be orthorhombic tungsten oxide (W3O8), with cell parameters a=1.035 nm, b=1.399 nm, c=0.378 nm. © 2007 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_HK
dc.relation.ispartofJournal of Crystal Growthen_HK
dc.rightsJournal of Crystal Growth . Copyright © Elsevier BV.en_HK
dc.subjectA1. SEMen_HK
dc.subjectA1. XRDen_HK
dc.subjectA3. Thermal evaporationen_HK
dc.subjectB1. Tungsten oxideen_HK
dc.titleGrowth of uniform tungsten oxide nanowires with small diameter via a two-step heating processen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-0248&volume=306&spage=395&epage=399&date=2007&atitle=Growth+of+uniform+tungsten+oxide+nanowires+with+small+diameter+via+a+two-step+heating+processen_HK
dc.identifier.emailWu, H: hswu@hkucc.hku.hken_HK
dc.identifier.authorityWu, H=rp00813en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.jcrysgro.2007.05.007en_HK
dc.identifier.scopuseid_2-s2.0-34547680310en_HK
dc.identifier.hkuros139141en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34547680310&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume306en_HK
dc.identifier.issue2en_HK
dc.identifier.spage395en_HK
dc.identifier.epage399en_HK
dc.identifier.isiWOS:000249614100025-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridHu, R=35242509400en_HK
dc.identifier.scopusauthoridWu, H=7405584367en_HK
dc.identifier.scopusauthoridHong, K=8657303000en_HK

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