File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Film thickness degradation of Au/GaN Schottky contact characteristics

TitleFilm thickness degradation of Au/GaN Schottky contact characteristics
Authors
KeywordsDiffusion
GaN
Gold
Schottky barrier
Issue Date2005
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseb
Citation
Materials Science And Engineering B: Solid-State Materials For Advanced Technology, 2005, v. 117 n. 1, p. 21-25 How to Cite?
AbstractElectrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 Å, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin (<500 Å) film Schottky diodes show significantly better rectification characteristics than those of thick Au films (>500 Å). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown. © 2004 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80964
ISSN
2015 Impact Factor: 2.331
2015 SCImago Journal Rankings: 0.723
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, Ken_HK
dc.contributor.authorWang, RXen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorLi, Sen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorGong, Men_HK
dc.date.accessioned2010-09-06T08:12:14Z-
dc.date.available2010-09-06T08:12:14Z-
dc.date.issued2005en_HK
dc.identifier.citationMaterials Science And Engineering B: Solid-State Materials For Advanced Technology, 2005, v. 117 n. 1, p. 21-25en_HK
dc.identifier.issn0921-5107en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80964-
dc.description.abstractElectrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 Å, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin (<500 Å) film Schottky diodes show significantly better rectification characteristics than those of thick Au films (>500 Å). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown. © 2004 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseben_HK
dc.relation.ispartofMaterials Science and Engineering B: Solid-State Materials for Advanced Technologyen_HK
dc.subjectDiffusionen_HK
dc.subjectGaNen_HK
dc.subjectGolden_HK
dc.subjectSchottky barrieren_HK
dc.titleFilm thickness degradation of Au/GaN Schottky contact characteristicsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0921-5093&volume=117&spage=21&epage=25&date=2005&atitle=Film+thickness+degradation+of+Au/GaN+Schottky+contact+characteristicsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.mseb.2004.10.011en_HK
dc.identifier.scopuseid_2-s2.0-12344307384en_HK
dc.identifier.hkuros97369en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-12344307384&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume117en_HK
dc.identifier.issue1en_HK
dc.identifier.spage21en_HK
dc.identifier.epage25en_HK
dc.identifier.isiWOS:000227163500005-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridWang, K=7501396674en_HK
dc.identifier.scopusauthoridWang, RX=7405339075en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridHuang, Y=26643004400en_HK
dc.identifier.scopusauthoridLi, S=7409241368en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.citeulike5124777-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats