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Article: Charge relaxation resistance at atomic scale: An ab initio calculation

TitleCharge relaxation resistance at atomic scale: An ab initio calculation
Authors
Issue Date2008
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2008, v. 77, article no. 245309 How to Cite?
AbstractWe report an investigation of ac quantum transport properties of a nanocapacitor from first principles. At low frequencies, the nanocapacitor is characterized by a static electrochemical capacitance Cμ and the charge relaxation resistance Rq. We carry out a first principle calculation within the nonequilibrium Green’s function formalism. In particular, we investigate charge relaxation resistance of a single carbon atom as well as two carbon atoms in a nanocapacitor made of a capped carbon nanotube (CNT) and an alkane chain connected to a bulk Si. The nature of charge relaxation resistance is predicted for this nanocapacitor. Specifically, we find that the charge relaxation resistance shows resonant behavior and it becomes sharper as the distance between plates of nanocapacitor increases. If there is only one transmission channel dominating the charge transport through the nanocapacitor, the charge relaxation resistance Rq is half of resistance quantum h/2e2. This result shows that the theory of charge relaxation resistance applies at atomic scale.
Persistent Identifierhttp://hdl.handle.net/10722/80963
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, Ben_HK
dc.contributor.authorWang, Jen_HK
dc.date.accessioned2010-09-06T08:12:13Z-
dc.date.available2010-09-06T08:12:13Z-
dc.date.issued2008en_HK
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2008, v. 77, article no. 245309en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80963-
dc.description.abstractWe report an investigation of ac quantum transport properties of a nanocapacitor from first principles. At low frequencies, the nanocapacitor is characterized by a static electrochemical capacitance Cμ and the charge relaxation resistance Rq. We carry out a first principle calculation within the nonequilibrium Green’s function formalism. In particular, we investigate charge relaxation resistance of a single carbon atom as well as two carbon atoms in a nanocapacitor made of a capped carbon nanotube (CNT) and an alkane chain connected to a bulk Si. The nature of charge relaxation resistance is predicted for this nanocapacitor. Specifically, we find that the charge relaxation resistance shows resonant behavior and it becomes sharper as the distance between plates of nanocapacitor increases. If there is only one transmission channel dominating the charge transport through the nanocapacitor, the charge relaxation resistance Rq is half of resistance quantum h/2e2. This result shows that the theory of charge relaxation resistance applies at atomic scale.-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)en_HK
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleCharge relaxation resistance at atomic scale: An ab initio calculationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=77&spage=245309: 1&epage=5&date=2008&atitle=Charge+relaxation+resistance+at+atomic+scale:+An+ab+initio+calculationen_HK
dc.identifier.emailWang, J: jianwang@hkusub.hku.hken_HK
dc.identifier.authorityWang, J=rp00799en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.77.245309-
dc.identifier.scopuseid_2-s2.0-45249092496-
dc.identifier.hkuros143209en_HK
dc.identifier.volume77-
dc.identifier.spagearticle no. 245309-
dc.identifier.epagearticle no. 245309-
dc.identifier.isiWOS:000257289700068-

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