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Article: Charge relaxation resistance at atomic scale: An ab initio calculation
Title | Charge relaxation resistance at atomic scale: An ab initio calculation |
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Authors | |
Issue Date | 2008 |
Publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ |
Citation | Physical Review B (Condensed Matter and Materials Physics), 2008, v. 77 n. 24, article no. 245309 How to Cite? |
Abstract | We report an investigation of ac quantum transport properties of a nanocapacitor from first principles. At low frequencies, the nanocapacitor is characterized by a static electrochemical capacitance Cμ and the charge relaxation resistance Rq. We carry out a first principle calculation within the nonequilibrium Green’s function formalism. In particular, we investigate charge relaxation resistance of a single carbon atom as well as two carbon atoms in a nanocapacitor made of a capped carbon nanotube (CNT) and an alkane chain connected to a bulk Si. The nature of charge relaxation resistance is predicted for this nanocapacitor. Specifically, we find that the charge relaxation resistance shows resonant behavior and it becomes sharper as the distance between plates of nanocapacitor increases. If there is only one transmission channel dominating the charge transport through the nanocapacitor, the charge relaxation resistance Rq is half of resistance quantum h/2e2. This result shows that the theory of charge relaxation resistance applies at atomic scale. |
Persistent Identifier | http://hdl.handle.net/10722/80963 |
ISSN | 2014 Impact Factor: 3.736 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Wang, B | en_HK |
dc.contributor.author | Wang, J | en_HK |
dc.date.accessioned | 2010-09-06T08:12:13Z | - |
dc.date.available | 2010-09-06T08:12:13Z | - |
dc.date.issued | 2008 | en_HK |
dc.identifier.citation | Physical Review B (Condensed Matter and Materials Physics), 2008, v. 77 n. 24, article no. 245309 | - |
dc.identifier.issn | 1098-0121 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80963 | - |
dc.description.abstract | We report an investigation of ac quantum transport properties of a nanocapacitor from first principles. At low frequencies, the nanocapacitor is characterized by a static electrochemical capacitance Cμ and the charge relaxation resistance Rq. We carry out a first principle calculation within the nonequilibrium Green’s function formalism. In particular, we investigate charge relaxation resistance of a single carbon atom as well as two carbon atoms in a nanocapacitor made of a capped carbon nanotube (CNT) and an alkane chain connected to a bulk Si. The nature of charge relaxation resistance is predicted for this nanocapacitor. Specifically, we find that the charge relaxation resistance shows resonant behavior and it becomes sharper as the distance between plates of nanocapacitor increases. If there is only one transmission channel dominating the charge transport through the nanocapacitor, the charge relaxation resistance Rq is half of resistance quantum h/2e2. This result shows that the theory of charge relaxation resistance applies at atomic scale. | - |
dc.language | eng | en_HK |
dc.publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ | en_HK |
dc.relation.ispartof | Physical Review B (Condensed Matter and Materials Physics) | en_HK |
dc.rights | Copyright 2008 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.77.245309 | - |
dc.title | Charge relaxation resistance at atomic scale: An ab initio calculation | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=77&spage=245309: 1&epage=5&date=2008&atitle=Charge+relaxation+resistance+at+atomic+scale:+An+ab+initio+calculation | en_HK |
dc.identifier.email | Wang, J: jianwang@hkusub.hku.hk | en_HK |
dc.identifier.authority | Wang, J=rp00799 | en_HK |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1103/PhysRevB.77.245309 | - |
dc.identifier.scopus | eid_2-s2.0-45249092496 | - |
dc.identifier.hkuros | 143209 | en_HK |
dc.identifier.volume | 77 | - |
dc.identifier.issue | 24 | - |
dc.identifier.spage | article no. 245309 | - |
dc.identifier.epage | article no. 245309 | - |
dc.identifier.isi | WOS:000257289700068 | - |
dc.identifier.issnl | 1098-0121 | - |