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Article: Charging-induced changes in reverse current-voltage characteristics of Al/Al-Rich Al 2O 3/p-Si Diodes

TitleCharging-induced changes in reverse current-voltage characteristics of Al/Al-Rich Al 2O 3/p-Si Diodes
Authors
Zhu, WChen, TPLiu, YYang, MZhang, SZhang, WLFung, S
KeywordsAluminum-rich aluminum oxide
Charge trapping
Current transport
Current-voltage characteristics
Memory effect
Metal-insulator-semiconductor (MIS) diodes
Nanocrystals
Issue Date2009
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 2009, v. 56 n. 9, p. 2060-2064 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2009.2026110
AbstractAn Al-rich Al 2O 3 thin film was deposited on a p-type silicon substrate by radio frequency sputtering to form Al/ Al-rich Al 2O 3/p-Si diodes. The current-voltage (I-V) characteristics of the diodes were determined by carrier injection from either the Si substrate or the Al gate and by carrier transport along the tunneling paths formed by Al nanocrystals distributed in the oxide layer. The reverse I-V characteristics were greatly affected by the charge trapping in the oxide layer, i.e., the electron trapping significantly reduced the reverse current while the hole trapping enhanced the current significantly. However, the charge trapping did not produce a large change in the forward I-V characteristic. © 2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/80947
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:000269154500033
Funding AgencyGrant Number
National Research Foundation of SingaporeNRF-G-CRP2007-01
National Natural Science Foundation of China (NSFC)60806040
Funding Information:

This work was supported by the National Research Foundation of Singapore under Project NRF-G-CRP2007-01. The work of Y. Liu was supported by the National Natural Science Foundation of China (NSFC) under Project 60806040. The review of this paper was arranged by Editor H. S. Momose.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhu, Wen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorZhang, Sen_HK
dc.contributor.authorZhang, WLen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:12:03Z-
dc.date.available2010-09-06T08:12:03Z-
dc.date.issued2009en_HK
dc.identifier.citationIeee Transactions On Electron Devices, 2009, v. 56 n. 9, p. 2060-2064en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80947-
dc.description.abstractAn Al-rich Al 2O 3 thin film was deposited on a p-type silicon substrate by radio frequency sputtering to form Al/ Al-rich Al 2O 3/p-Si diodes. The current-voltage (I-V) characteristics of the diodes were determined by carrier injection from either the Si substrate or the Al gate and by carrier transport along the tunneling paths formed by Al nanocrystals distributed in the oxide layer. The reverse I-V characteristics were greatly affected by the charge trapping in the oxide layer, i.e., the electron trapping significantly reduced the reverse current while the hole trapping enhanced the current significantly. However, the charge trapping did not produce a large change in the forward I-V characteristic. © 2009 IEEE.en_HK
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.rights©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectAluminum-rich aluminum oxideen_HK
dc.subjectCharge trappingen_HK
dc.subjectCurrent transporten_HK
dc.subjectCurrent-voltage characteristicsen_HK
dc.subjectMemory effecten_HK
dc.subjectMetal-insulator-semiconductor (MIS) diodesen_HK
dc.subjectNanocrystalsen_HK
dc.titleCharging-induced changes in reverse current-voltage characteristics of Al/Al-Rich Al 2O 3/p-Si Diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=56&issue=9&spage=2060&epage=2064&date=2009&atitle=Charging-induced+changes+in+reverse+current-voltage+characteristics+of+Al/Al-rich+A12O3/p-Si++diodesen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TED.2009.2026110en_HK
dc.identifier.scopuseid_2-s2.0-69549091595en_HK
dc.identifier.hkuros167919en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-69549091595&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume56en_HK
dc.identifier.issue9en_HK
dc.identifier.spage2060en_HK
dc.identifier.epage2064en_HK
dc.identifier.isiWOS:000269154500033-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhu, W=7404232937en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridZhang, S=7409376020en_HK
dc.identifier.scopusauthoridZhang, WL=26633254400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0018-9383-

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