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Article: A study of recombination current in Schottky contacts by photovoltage measurements

TitleA study of recombination current in Schottky contacts by photovoltage measurements
Authors
Issue Date1994
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 1994, v. 9 n. 11, p. 2101-2106 How to Cite?
AbstractPhotovoltage measurements and internal photoemission measurements have been performed for Au/n-GaAs and Ag/n-GaAs contacts within the temperature range of 7 to 300 K. Reliable Schottky barrier heights (SBH) are determined from internal photoemission measurements which show that the SBH in both the contacts is independent of temperature, implying the interfacial Fermi level pinning relative to the conduction band minimum. It is found that the current transport processes such as thermionic emission, tunnelling and leakage current cannot be responsible for the observed photocurrent-photovoltage relationship for large photocurrent in the photovoltage measurements. The activation energies found for the current transport are actually the same in both the contacts, which are almost equal to half of the bandgap of GaAs, indicating that the recombination current is the dominant process. In addition, our results indicate that the equation currently used for the recombination current in Schottky contacts is generally over-simplified.
Persistent Identifierhttp://hdl.handle.net/10722/80944
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-06T08:12:00Z-
dc.date.available2010-09-06T08:12:00Z-
dc.date.issued1994en_HK
dc.identifier.citationSemiconductor Science And Technology, 1994, v. 9 n. 11, p. 2101-2106en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80944-
dc.description.abstractPhotovoltage measurements and internal photoemission measurements have been performed for Au/n-GaAs and Ag/n-GaAs contacts within the temperature range of 7 to 300 K. Reliable Schottky barrier heights (SBH) are determined from internal photoemission measurements which show that the SBH in both the contacts is independent of temperature, implying the interfacial Fermi level pinning relative to the conduction band minimum. It is found that the current transport processes such as thermionic emission, tunnelling and leakage current cannot be responsible for the observed photocurrent-photovoltage relationship for large photocurrent in the photovoltage measurements. The activation energies found for the current transport are actually the same in both the contacts, which are almost equal to half of the bandgap of GaAs, indicating that the recombination current is the dominant process. In addition, our results indicate that the equation currently used for the recombination current in Schottky contacts is generally over-simplified.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.titleA study of recombination current in Schottky contacts by photovoltage measurementsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0268-1242&volume=9&spage=2101&epage=2106&date=1994&atitle=A+study+of+recombination+current+in+Schottky+contacts+by+photovoltage+measurementsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0268-1242/9/11/011en_HK
dc.identifier.scopuseid_2-s2.0-0028549798en_HK
dc.identifier.hkuros3359en_HK
dc.identifier.volume9en_HK
dc.identifier.issue11en_HK
dc.identifier.spage2101en_HK
dc.identifier.epage2106en_HK
dc.identifier.isiWOS:A1994PR68000011-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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