File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Optical and microstructural characterization of porous silicon using photoluminescence, SEM and positron annihilation spectroscopy

TitleOptical and microstructural characterization of porous silicon using photoluminescence, SEM and positron annihilation spectroscopy
Authors
Issue Date2007
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
Citation
Journal Of Physics Condensed Matter, 2007, v. 19 n. 48 How to Cite?
AbstractWe have studied the dependence of porous silicon morphology and porosity on fabrication conditions. N-type (100) silicon wafers with resistivity of 2-5Ωcm were electrochemically etched at various current densities and anodization times. Surface morphology and the thickness of the samples were examined by scanning electron microscopy (SEM). Detailed information of the porous silicon layer morphology with variation of preparation conditions was obtained by positron annihilation spectroscopy (PAS): the depth-defect profile and open pore interconnectivity on the sample surface has been studied using a slow positron beam. Coincidence Doppler broadening spectroscopy (CDBS) was used to study the chemical environment of the samples. The presence of silicon micropores with diameter varying from 1.37 to 1.51nm was determined by positron lifetime spectroscopy (PALS). Visible luminescence from the samples was observed, which is considered to be a combination effect of quantum confinement and the effect of Si = O double bond formation near the SiO2/Si interface according to the results from photoluminescence (PL) and positron annihilation spectroscopy measurements. The work shows that the study of the positronium formed when a positron is implanted into the porous surface provides valuable information on the pore distribution and open pore interconnectivity, which suggests that positron annihilation spectroscopy is a useful tool in the porous silicon micropores' characterization. © IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/80928
ISSN
2015 Impact Factor: 2.209
2015 SCImago Journal Rankings: 0.812
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorCheung, CKen_HK
dc.contributor.authorNahid, Fen_HK
dc.contributor.authorCheng, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorDjurisić, ABen_HK
dc.contributor.authorPramanik, Cen_HK
dc.contributor.authorSaha, Hen_HK
dc.contributor.authorSarkar, CKen_HK
dc.date.accessioned2010-09-06T08:11:50Z-
dc.date.available2010-09-06T08:11:50Z-
dc.date.issued2007en_HK
dc.identifier.citationJournal Of Physics Condensed Matter, 2007, v. 19 n. 48en_HK
dc.identifier.issn0953-8984en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80928-
dc.description.abstractWe have studied the dependence of porous silicon morphology and porosity on fabrication conditions. N-type (100) silicon wafers with resistivity of 2-5Ωcm were electrochemically etched at various current densities and anodization times. Surface morphology and the thickness of the samples were examined by scanning electron microscopy (SEM). Detailed information of the porous silicon layer morphology with variation of preparation conditions was obtained by positron annihilation spectroscopy (PAS): the depth-defect profile and open pore interconnectivity on the sample surface has been studied using a slow positron beam. Coincidence Doppler broadening spectroscopy (CDBS) was used to study the chemical environment of the samples. The presence of silicon micropores with diameter varying from 1.37 to 1.51nm was determined by positron lifetime spectroscopy (PALS). Visible luminescence from the samples was observed, which is considered to be a combination effect of quantum confinement and the effect of Si = O double bond formation near the SiO2/Si interface according to the results from photoluminescence (PL) and positron annihilation spectroscopy measurements. The work shows that the study of the positronium formed when a positron is implanted into the porous surface provides valuable information on the pore distribution and open pore interconnectivity, which suggests that positron annihilation spectroscopy is a useful tool in the porous silicon micropores' characterization. © IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcmen_HK
dc.relation.ispartofJournal of Physics Condensed Matteren_HK
dc.titleOptical and microstructural characterization of porous silicon using photoluminescence, SEM and positron annihilation spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0953-8984&volume=19&spage=486002: 1&epage=17&date=2007&atitle=Optical+and+microstructural+characterization+of+porous+silicon+using+photoluminescence,+SEM+and+positron+annihilation+spectroscopyen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailDjurisić, AB: dalek@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityDjurisić, AB=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0953-8984/19/48/486002en_HK
dc.identifier.scopuseid_2-s2.0-36248934169en_HK
dc.identifier.hkuros138814en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-36248934169&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume19en_HK
dc.identifier.issue48en_HK
dc.identifier.isiWOS:000251797600004-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridCheung, CK=10044144900en_HK
dc.identifier.scopusauthoridNahid, F=23005581800en_HK
dc.identifier.scopusauthoridCheng, CC=23003304100en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridDjurisić, AB=7004904830en_HK
dc.identifier.scopusauthoridPramanik, C=9335174800en_HK
dc.identifier.scopusauthoridSaha, H=9332689000en_HK
dc.identifier.scopusauthoridSarkar, CK=7103284163en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats