File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: The role of localization length

TitleNon-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: The role of localization length
Authors
Issue Date2006
PublisherOptical Society of America. The Journal's web site is located at http://www.opticsexpress.org
Citation
Optics Express, 2006, v. 14 n. 26, p. 13151-13157 How to Cite?
AbstractIn this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered InGaN/GaN quantum wells. The luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. Adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by Rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. Combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics. © 2006 Optical Society of America.
Persistent Identifierhttp://hdl.handle.net/10722/80923
ISSN
2015 Impact Factor: 3.148
2015 SCImago Journal Rankings: 2.186
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, YJen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorZhao, DGen_HK
dc.contributor.authorZhu, JJen_HK
dc.contributor.authorYang, Hen_HK
dc.contributor.authorShan, XDen_HK
dc.contributor.authorYu, DPen_HK
dc.date.accessioned2010-09-06T08:11:47Z-
dc.date.available2010-09-06T08:11:47Z-
dc.date.issued2006en_HK
dc.identifier.citationOptics Express, 2006, v. 14 n. 26, p. 13151-13157en_HK
dc.identifier.issn1094-4087en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80923-
dc.description.abstractIn this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered InGaN/GaN quantum wells. The luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. Adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by Rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. Combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics. © 2006 Optical Society of America.en_HK
dc.languageengen_HK
dc.publisherOptical Society of America. The Journal's web site is located at http://www.opticsexpress.orgen_HK
dc.relation.ispartofOptics Expressen_HK
dc.rightsOptics Express. Copyright © Optical Society of America.en_HK
dc.titleNon-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: The role of localization lengthen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1094-4087&volume=14&spage=13151&epage=13157&date=2006&atitle=Non-exponential+photoluminescence+decay+dynamics+of+localized+carriers+in+disordered+InGaN/GaN+quantum+wells:+the+role+of+localization+lengthen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1364/OE.14.013151en_HK
dc.identifier.scopuseid_2-s2.0-33845750052en_HK
dc.identifier.hkuros125548en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33845750052&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume14en_HK
dc.identifier.issue26en_HK
dc.identifier.spage13151en_HK
dc.identifier.epage13157en_HK
dc.identifier.isiWOS:000243144600067-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, YJ=8296286800en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridZhao, DG=7403489944en_HK
dc.identifier.scopusauthoridZhu, JJ=8690501700en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK
dc.identifier.scopusauthoridShan, XD=24559353900en_HK
dc.identifier.scopusauthoridYu, DP=7404667022en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats