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Article: A search for defect configurational changes in the post-breakdown metastability of semi-insulating GaAs

TitleA search for defect configurational changes in the post-breakdown metastability of semi-insulating GaAs
Authors
Luo, YLFung, SBeling, CDLing, CCLi, S
Issue Date2004
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
Citation
Physica Status Solidi (B) Basic Research, 2004, v. 241 n. 2, p. 317-320 How to Cite?
DOI: http://dx.doi.org/10.1002/pssb.200301920
AbstractRecently room temperature electrically induced metastability in semi-insulating (SI)-GaAS has been reported in which the normally high resistivity state of SI-GaAs converts into a low resistivity state when breakdown electric fields are applied to the metal/SI-GaAs/metal systems. In this brief report, the methods of photo-quenching and positron annihilation lifetime spectroscopy have been employed to see whether the high field breakdown and subsequent metastability has its origins in some configurational change of a native defect in the sample. Our results indicate that rather than being due to an atomic configurational change the observed metastability is most likely of purely electronic origin. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/80905
ISSN
0370-1972
2023 Impact Factor: 1.5
2023 SCImago Journal Rankings: 0.388
ISI Accession Number ID
WOS:000188980200008
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLuo, YLen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorLi, Sen_HK
dc.date.accessioned2010-09-06T08:11:34Z-
dc.date.available2010-09-06T08:11:34Z-
dc.date.issued2004en_HK
dc.identifier.citationPhysica Status Solidi (B) Basic Research, 2004, v. 241 n. 2, p. 317-320en_HK
dc.identifier.issn0370-1972en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80905-
dc.description.abstractRecently room temperature electrically induced metastability in semi-insulating (SI)-GaAS has been reported in which the normally high resistivity state of SI-GaAs converts into a low resistivity state when breakdown electric fields are applied to the metal/SI-GaAs/metal systems. In this brief report, the methods of photo-quenching and positron annihilation lifetime spectroscopy have been employed to see whether the high field breakdown and subsequent metastability has its origins in some configurational change of a native defect in the sample. Our results indicate that rather than being due to an atomic configurational change the observed metastability is most likely of purely electronic origin. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_HK
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.comen_HK
dc.relation.ispartofPhysica Status Solidi (B) Basic Researchen_HK
dc.titleA search for defect configurational changes in the post-breakdown metastability of semi-insulating GaAsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0370-1972&volume=241&spage=317&epage=320&date=2004&atitle=A+search+for+defect+configurational+changes+in+the+post-breakdown+metastability+of+semi-insulating+GaAsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssb.200301920en_HK
dc.identifier.scopuseid_2-s2.0-4644266754en_HK
dc.identifier.hkuros85629en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-4644266754&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume241en_HK
dc.identifier.issue2en_HK
dc.identifier.spage317en_HK
dc.identifier.epage320en_HK
dc.identifier.isiWOS:000188980200008-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLuo, YL=7404333050en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridLi, S=7409241368en_HK
dc.identifier.issnl0370-1972-

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