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Article: Numerical study of electrostatic properties of metal/semi-insulating GaAs contacts

TitleNumerical study of electrostatic properties of metal/semi-insulating GaAs contacts
Authors
KeywordsA. Semiconductors
A. surfaces and interfaces
Issue Date1995
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 1995, v. 94 n. 4, p. 287-291 How to Cite?
AbstractA numerical simulation of the electrostatic properties of metal / semi - insulating GaAs contacts has been carried out for different surface potentials at different temperatures. Specific results have been obtained for the three most common compensation mechanisms within the semi - insulating GaAs material: ( a ) a deep donor and a shallow acceptor, ( b ) a shallow donor and a deep acceptor, and ( c ) a deep donor and a deep acceptor. These results are compared to those from the one - sided Schottky abrupt junction model, and some discussions on the correlation of the electrostatic properties with Schottky barrier formation are presented. © 1995.
Persistent Identifierhttp://hdl.handle.net/10722/80901
ISSN
2015 Impact Factor: 1.458
2015 SCImago Journal Rankings: 0.776

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, YCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-06T08:11:31Z-
dc.date.available2010-09-06T08:11:31Z-
dc.date.issued1995en_HK
dc.identifier.citationSolid State Communications, 1995, v. 94 n. 4, p. 287-291en_HK
dc.identifier.issn0038-1098en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80901-
dc.description.abstractA numerical simulation of the electrostatic properties of metal / semi - insulating GaAs contacts has been carried out for different surface potentials at different temperatures. Specific results have been obtained for the three most common compensation mechanisms within the semi - insulating GaAs material: ( a ) a deep donor and a shallow acceptor, ( b ) a shallow donor and a deep acceptor, and ( c ) a deep donor and a deep acceptor. These results are compared to those from the one - sided Schottky abrupt junction model, and some discussions on the correlation of the electrostatic properties with Schottky barrier formation are presented. © 1995.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_HK
dc.relation.ispartofSolid State Communicationsen_HK
dc.subjectA. Semiconductorsen_HK
dc.subjectA. surfaces and interfacesen_HK
dc.titleNumerical study of electrostatic properties of metal/semi-insulating GaAs contactsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0038-1098&volume=94&spage=287&epage=291&date=1995&atitle=Numerical+study+of+electrostatic+properties+of+metal/semi-+insulating+GaAs+contactsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0029289879en_HK
dc.identifier.hkuros3327en_HK
dc.identifier.volume94en_HK
dc.identifier.issue4en_HK
dc.identifier.spage287en_HK
dc.identifier.epage291en_HK
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridLiu, YC=7410214740en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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