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Article: Depolarization and exciton-like shifts in modulation-doped single rectangular and diffusion-modified quantum wells under uniform electric fields

TitleDepolarization and exciton-like shifts in modulation-doped single rectangular and diffusion-modified quantum wells under uniform electric fields
Authors
Issue Date1999
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
Citation
Journal Of Physics Condensed Matter, 1999, v. 11 n. 5, p. 1353-1362 How to Cite?
AbstractEnergy levels in the modulation-doped single rectangular and diffusion-modified quantum wells Al 0.3Ga 0.7As/GaAs are obtained using the Kohn and Sham density funclional theory (DFT). The generalized DFT which uses a screened exchange potential in the local density approximation has been used to improve the accuracy of the energies and wavefunctions in these wells. The energy difference between the first excited state and the ground state has been studied in the presence of combined photon and electric fields for two wells with well widths of 70 Å and 100 Å. The energy difference is found to increase as a result of the depolarization and exciton-like shifts when there is no external bias. Under the electric field the shift in the energy difference decreases due to the vanishing of the exciton-like effect. The results obtained within the conventional Kohn and Sham DFT and within the generalized DFT are found to be the same for the well with a width of 100 Å. However, the results obtained from these two schemes are found to be different when the well width is 70 Å.
Persistent Identifierhttp://hdl.handle.net/10722/80889
ISSN
2015 Impact Factor: 2.209
2015 SCImago Journal Rankings: 0.812
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_HK
dc.contributor.authorPanda, Sen_HK
dc.contributor.authorPanda, BKen_HK
dc.date.accessioned2010-09-06T08:11:23Z-
dc.date.available2010-09-06T08:11:23Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal Of Physics Condensed Matter, 1999, v. 11 n. 5, p. 1353-1362en_HK
dc.identifier.issn0953-8984en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80889-
dc.description.abstractEnergy levels in the modulation-doped single rectangular and diffusion-modified quantum wells Al 0.3Ga 0.7As/GaAs are obtained using the Kohn and Sham density funclional theory (DFT). The generalized DFT which uses a screened exchange potential in the local density approximation has been used to improve the accuracy of the energies and wavefunctions in these wells. The energy difference between the first excited state and the ground state has been studied in the presence of combined photon and electric fields for two wells with well widths of 70 Å and 100 Å. The energy difference is found to increase as a result of the depolarization and exciton-like shifts when there is no external bias. Under the electric field the shift in the energy difference decreases due to the vanishing of the exciton-like effect. The results obtained within the conventional Kohn and Sham DFT and within the generalized DFT are found to be the same for the well with a width of 100 Å. However, the results obtained from these two schemes are found to be different when the well width is 70 Å.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcmen_HK
dc.relation.ispartofJournal of Physics Condensed Matteren_HK
dc.titleDepolarization and exciton-like shifts in modulation-doped single rectangular and diffusion-modified quantum wells under uniform electric fieldsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0953-8984&volume=11&spage=1353&epage=1362&date=1999&atitle=Depolarization+and+Exciton-Like+Shifts+in+Modulation-Doped+Single+Rectangular+and+Diffusion-Modified+Quantum+Wells+under+Uniform+Electric+Fieldsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0953-8984/11/5/020en_HK
dc.identifier.scopuseid_2-s2.0-0033534991en_HK
dc.identifier.hkuros39916en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033534991&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume11en_HK
dc.identifier.issue5en_HK
dc.identifier.spage1353en_HK
dc.identifier.epage1362en_HK
dc.identifier.isiWOS:000078572500020-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridPanda, S=7201766549en_HK
dc.identifier.scopusauthoridPanda, BK=22963418500en_HK

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