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Article: Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC
Title | Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC |
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Authors | |
Issue Date | 2006 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2006, v. 99 n. 9, article no. 093511 How to Cite? |
Abstract | Low-temperature photoluminescence spectroscopy has revealed a series of features labeled S1, S2, S3 in n -type 6H-SiC after neutron and electron irradiation. Thermal annealing studies showed that the defects S1, S2, S3 disappeared at 500 °C. However, the well-known D1 center was only detected for annealing temperatures over 700 °C. This experimental observation not only indicated that the defects S1, S2, S3 were a set of primary defects and the D1 center was a kind of secondary defect, but also showed that the D1 center and the E1, E2 observed using deep level transient spectroscopy might not be the same type of defects arising from the same physical origin. © 2006 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/80887 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Zhong, ZQ | en_HK |
dc.contributor.author | Wu, DX | en_HK |
dc.contributor.author | Gong, M | en_HK |
dc.contributor.author | Wang, O | en_HK |
dc.contributor.author | Shi, SL | en_HK |
dc.contributor.author | Xu, SJ | en_HK |
dc.contributor.author | Chen, XD | en_HK |
dc.contributor.author | Ling, CC | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Brauer, G | en_HK |
dc.contributor.author | Anwand, W | en_HK |
dc.contributor.author | Skorupa, W | en_HK |
dc.date.accessioned | 2010-09-06T08:11:22Z | - |
dc.date.available | 2010-09-06T08:11:22Z | - |
dc.date.issued | 2006 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 2006, v. 99 n. 9, article no. 093511 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80887 | - |
dc.description.abstract | Low-temperature photoluminescence spectroscopy has revealed a series of features labeled S1, S2, S3 in n -type 6H-SiC after neutron and electron irradiation. Thermal annealing studies showed that the defects S1, S2, S3 disappeared at 500 °C. However, the well-known D1 center was only detected for annealing temperatures over 700 °C. This experimental observation not only indicated that the defects S1, S2, S3 were a set of primary defects and the D1 center was a kind of secondary defect, but also showed that the D1 center and the E1, E2 observed using deep level transient spectroscopy might not be the same type of defects arising from the same physical origin. © 2006 American Institute of Physics. | en_HK |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2006, v. 99 n. 9, article no. 093511 and may be found at https://doi.org/10.1063/1.2195014 | - |
dc.title | Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=99&spage=093511: 1&epage=3&date=2006&atitle=Primary+photoluminescence+in+as-neutron+(electron)+–irradiated+n-type+6H-SiC | en_HK |
dc.identifier.email | Xu, SJ: sjxu@hku.hk | en_HK |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Xu, SJ=rp00821 | en_HK |
dc.identifier.authority | Ling, CC=rp00747 | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.2195014 | en_HK |
dc.identifier.scopus | eid_2-s2.0-33646894461 | en_HK |
dc.identifier.hkuros | 115807 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-33646894461&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 99 | en_HK |
dc.identifier.issue | 9 | en_HK |
dc.identifier.spage | article no. 093511 | - |
dc.identifier.epage | article no. 093511 | - |
dc.identifier.isi | WOS:000237682900031 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Zhong, ZQ=8304932300 | en_HK |
dc.identifier.scopusauthorid | Wu, DX=23981312300 | en_HK |
dc.identifier.scopusauthorid | Gong, M=9273057400 | en_HK |
dc.identifier.scopusauthorid | Wang, O=13611875800 | en_HK |
dc.identifier.scopusauthorid | Shi, SL=9532439000 | en_HK |
dc.identifier.scopusauthorid | Xu, SJ=7404439005 | en_HK |
dc.identifier.scopusauthorid | Chen, XD=15031490600 | en_HK |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Brauer, G=7101650540 | en_HK |
dc.identifier.scopusauthorid | Anwand, W=9432786300 | en_HK |
dc.identifier.scopusauthorid | Skorupa, W=7102608722 | en_HK |
dc.identifier.issnl | 0021-8979 | - |