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Article: Positron beam studies of transients in semiconductors

TitlePositron beam studies of transients in semiconductors
Authors
KeywordsDeep level
Deep level spectroscopy
Positron beam
Vacancy sensing
Issue Date2006
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
Applied Surface Science, 2006, v. 252 n. 9, p. 3172-3182 How to Cite?
AbstractVacancy-sensing positron deep level transient spectroscopy (PDLTS) is a positron beam-based technique that seeks to provide information on the electronic ionization levels of vacancy defects probed by the positron through the monitoring of thermal transients. The experimental discoveries leading to the concept of vacancy-sensing PDLTS are first reviewed. The major problem associated with this technique is discussed, namely the strong electric fields establish in the near surface region of the sample during the thermal transient which tend to sweep positrons into the contact with negligible defect trapping. New simulations are presented which suggest that under certain conditions a sufficient fraction of positrons may be trapped into ionizing defects rendering PDLTS technique workable. Some suggestions are made for techniques that might avoid the problematic electric field problem, such as optical-PDLTS where deep levels are populated using light and the use of high forward bias currents for trap filling. © 2005 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80886
ISSN
2015 Impact Factor: 3.15
2015 SCImago Journal Rankings: 0.930
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorCheung, CKen_HK
dc.contributor.authorNaik, PSen_HK
dc.contributor.authorZhang, JDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:11:21Z-
dc.date.available2010-09-06T08:11:21Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Surface Science, 2006, v. 252 n. 9, p. 3172-3182en_HK
dc.identifier.issn0169-4332en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80886-
dc.description.abstractVacancy-sensing positron deep level transient spectroscopy (PDLTS) is a positron beam-based technique that seeks to provide information on the electronic ionization levels of vacancy defects probed by the positron through the monitoring of thermal transients. The experimental discoveries leading to the concept of vacancy-sensing PDLTS are first reviewed. The major problem associated with this technique is discussed, namely the strong electric fields establish in the near surface region of the sample during the thermal transient which tend to sweep positrons into the contact with negligible defect trapping. New simulations are presented which suggest that under certain conditions a sufficient fraction of positrons may be trapped into ionizing defects rendering PDLTS technique workable. Some suggestions are made for techniques that might avoid the problematic electric field problem, such as optical-PDLTS where deep levels are populated using light and the use of high forward bias currents for trap filling. © 2005 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsuscen_HK
dc.relation.ispartofApplied Surface Scienceen_HK
dc.rightsApplied Surface Science. Copyright © Elsevier BV.en_HK
dc.subjectDeep levelen_HK
dc.subjectDeep level spectroscopyen_HK
dc.subjectPositron beamen_HK
dc.subjectVacancy sensingen_HK
dc.titlePositron beam studies of transients in semiconductorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0169-4332&volume=252&spage=3172&epage=3182&date=2006&atitle=Positron+beam+studies+of+transients+in+semiconductorsen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.apsusc.2005.08.043en_HK
dc.identifier.scopuseid_2-s2.0-32644476111en_HK
dc.identifier.hkuros115061en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-32644476111&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume252en_HK
dc.identifier.issue9en_HK
dc.identifier.spage3172en_HK
dc.identifier.epage3182en_HK
dc.identifier.isiWOS:000236021300015-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridCheung, CK=10044144900en_HK
dc.identifier.scopusauthoridNaik, PS=8451851900en_HK
dc.identifier.scopusauthoridZhang, JD=8555988600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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