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Conference Paper: Annealing study of A1/GaSb contact with the use of doppler broadening technique

TitleAnnealing study of A1/GaSb contact with the use of doppler broadening technique
Authors
Issue Date2005
PublisherPolska Akademia Nauk, Instytut Fizyki. The Journal's web site is located at http://info.ifpan.edu.pl/ACTA/acta.home.html
Citation
Proceedings of the 35th Polish Seminar on Positron Annihilation (PSPA), Turawa, Poland, 20-24 September 2004. In Acta Physica Polonica Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics, 2005, v. 107 n. 5, p. 874-879 How to Cite?
AbstractUsing a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a∼5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400^ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of SB and L+,B of the GaSb bulk showed the annealing out of positron traps (possibly the VGa-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of VGa-related defect and the positron shallow trap GaSb antisite.
Persistent Identifierhttp://hdl.handle.net/10722/80878
ISSN
2015 Impact Factor: 0.525
2015 SCImago Journal Rankings: 0.273
References

 

DC FieldValueLanguage
dc.contributor.authorWang, HYen_HK
dc.contributor.authorWeng, HMen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorYe, BJen_HK
dc.contributor.authorZhou, XYen_HK
dc.contributor.authorHan, RDen_HK
dc.date.accessioned2010-09-06T08:11:16Z-
dc.date.available2010-09-06T08:11:16Z-
dc.date.issued2005en_HK
dc.identifier.citationProceedings of the 35th Polish Seminar on Positron Annihilation (PSPA), Turawa, Poland, 20-24 September 2004. In Acta Physica Polonica Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics, 2005, v. 107 n. 5, p. 874-879en_HK
dc.identifier.issn0587-4246en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80878-
dc.description.abstractUsing a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a∼5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400^ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of SB and L+,B of the GaSb bulk showed the annealing out of positron traps (possibly the VGa-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of VGa-related defect and the positron shallow trap GaSb antisite.-
dc.languageengen_HK
dc.publisherPolska Akademia Nauk, Instytut Fizyki. The Journal's web site is located at http://info.ifpan.edu.pl/ACTA/acta.home.htmlen_HK
dc.relation.ispartofActa Physica Polonica Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleAnnealing study of A1/GaSb contact with the use of doppler broadening techniqueen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailWang, HY: hywang@mail.ustc.edu.cnen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.scopuseid_2-s2.0-20344368316-
dc.identifier.hkuros100029en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-20344368316&selection=ref&src=s&origin=recordpage-
dc.identifier.volume107-
dc.identifier.issue5-
dc.identifier.spage874-
dc.identifier.epage879-
dc.publisher.placePoland-
dc.description.otherProceedings of the 35th Polish Seminar on Positron Annihilation (PSPA), Turawa, Poland, 20-24 September 2004. In Acta Physica Polonica Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics, 2005, v. 107 n. 5, p. 874-879-
dc.identifier.scopusauthoridWang, HY=7501740999-
dc.identifier.scopusauthoridWeng, HM=7102468725-
dc.identifier.scopusauthoridLing, CC=13310239300-
dc.identifier.scopusauthoridYe, BJ=7102338554-
dc.identifier.scopusauthoridZhou, XY=7410093961-
dc.identifier.scopusauthoridHan, RD=7202457519-

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