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Article: Origin of the 'S-shaped' temperature dependence of luminescent peaks from semiconductors

TitleOrigin of the 'S-shaped' temperature dependence of luminescent peaks from semiconductors
Authors
Issue Date2005
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
Citation
Journal Of Physics Condensed Matter, 2005, v. 17 n. 30, p. 4853-4858 How to Cite?
AbstractThe 'S-shape' (decrease-increase-decrease) temperature dependence of luminescence peak shift from semiconductors is considered. A luminescence model for the localized state ensemble was employed to interpret this anomalous temperature dependence of the emission peak. The model provides a supplemental contribution from the thermal redistribution of localized carriers to the empirical Varshni relation describing the temperature dependence of the bandgap of perfect semiconductors. Excellent agreement between the theoretical calculation and the experiments was achieved over the whole studied temperature region. The physical origin of the 'S-shaped' shift is revealed. © 2005 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/80877
ISSN
2015 Impact Factor: 2.209
2015 SCImago Journal Rankings: 0.812
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, Qen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2010-09-06T08:11:15Z-
dc.date.available2010-09-06T08:11:15Z-
dc.date.issued2005en_HK
dc.identifier.citationJournal Of Physics Condensed Matter, 2005, v. 17 n. 30, p. 4853-4858en_HK
dc.identifier.issn0953-8984en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80877-
dc.description.abstractThe 'S-shape' (decrease-increase-decrease) temperature dependence of luminescence peak shift from semiconductors is considered. A luminescence model for the localized state ensemble was employed to interpret this anomalous temperature dependence of the emission peak. The model provides a supplemental contribution from the thermal redistribution of localized carriers to the empirical Varshni relation describing the temperature dependence of the bandgap of perfect semiconductors. Excellent agreement between the theoretical calculation and the experiments was achieved over the whole studied temperature region. The physical origin of the 'S-shaped' shift is revealed. © 2005 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcmen_HK
dc.relation.ispartofJournal of Physics Condensed Matteren_HK
dc.titleOrigin of the 'S-shaped' temperature dependence of luminescent peaks from semiconductorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0953-8984&volume=17&spage=4853&epage=4858&date=2005&atitle=Origin+of+the+`S-shaped%27+temperature+dependence+of+luminescent+peaks+from+semiconductorsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0953-8984/17/30/011en_HK
dc.identifier.scopuseid_2-s2.0-22844435051en_HK
dc.identifier.hkuros109253en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-22844435051&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume17en_HK
dc.identifier.issue30en_HK
dc.identifier.spage4853en_HK
dc.identifier.epage4858en_HK
dc.identifier.isiWOS:000231105100013-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.citeulike263487-

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