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Article: Depth profiling of charging effect of Si nanocrystals embedded in SiO2: A study of charge diffusion among Si nanocrystals

TitleDepth profiling of charging effect of Si nanocrystals embedded in SiO2: A study of charge diffusion among Si nanocrystals
Authors
Issue Date2006
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/jpcbfk
Citation
Journal Of Physical Chemistry B, 2006, v. 110 n. 33, p. 16499-16502 How to Cite?
AbstractSi nanocrystal (nc-Si) embedded in SiO2 thin film is synthesized with low-energy Si ion implantation. Depth profiling of the charging effect of the nc-Si is determined from X-ray photoemission measurement. It is observed that there is a strong correlation between the depth profile of the charging effect and the nc-Si depth distribution. The charging effect is found to decrease with the increase of nc-Si concentration and to vanish when a densely stacked nanocrystal layer is formed. The phenomenon is attributed to the charge diffusion among the nanocrystals. The charge diffusion in the nanocrystal layer may have an important implication for nanocrystal flash memory. When such a layer is used as the charge-storage layer in the memory cells, the stored charges could be lost due to the rapid charge diffusion among the nc-Si if a single defect exists in the tunneling oxide, causing a reliability problem in data retention. © 2006 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/80865
ISSN
2015 Impact Factor: 3.187
2015 SCImago Journal Rankings: 1.414
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorNg, CYen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorZhang, Sen_HK
dc.contributor.authorFu, YQen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:11:07Z-
dc.date.available2010-09-06T08:11:07Z-
dc.date.issued2006en_HK
dc.identifier.citationJournal Of Physical Chemistry B, 2006, v. 110 n. 33, p. 16499-16502en_HK
dc.identifier.issn1520-6106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80865-
dc.description.abstractSi nanocrystal (nc-Si) embedded in SiO2 thin film is synthesized with low-energy Si ion implantation. Depth profiling of the charging effect of the nc-Si is determined from X-ray photoemission measurement. It is observed that there is a strong correlation between the depth profile of the charging effect and the nc-Si depth distribution. The charging effect is found to decrease with the increase of nc-Si concentration and to vanish when a densely stacked nanocrystal layer is formed. The phenomenon is attributed to the charge diffusion among the nanocrystals. The charge diffusion in the nanocrystal layer may have an important implication for nanocrystal flash memory. When such a layer is used as the charge-storage layer in the memory cells, the stored charges could be lost due to the rapid charge diffusion among the nc-Si if a single defect exists in the tunneling oxide, causing a reliability problem in data retention. © 2006 American Chemical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/jpcbfken_HK
dc.relation.ispartofJournal of Physical Chemistry Ben_HK
dc.titleDepth profiling of charging effect of Si nanocrystals embedded in SiO2: A study of charge diffusion among Si nanocrystalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1520-6106&volume=110&spage=16499&epage=16502&date=2006&atitle=Depth+profiling+of+charging+effect+of+Si+nanocrystals+embedded+in+SiO2:+A+study+of+charge+diffusion+among+Si+nanocrystalsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/jp062852cen_HK
dc.identifier.scopuseid_2-s2.0-33748557782en_HK
dc.identifier.hkuros124141en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33748557782&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume110en_HK
dc.identifier.issue33en_HK
dc.identifier.spage16499en_HK
dc.identifier.epage16502en_HK
dc.identifier.isiWOS:000239818000051-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridZhang, S=7409376020en_HK
dc.identifier.scopusauthoridFu, YQ=7404433406en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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