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Article: Dislocation network at InN/GaN interface revealed by scanning tunneling microscopy

TitleDislocation network at InN/GaN interface revealed by scanning tunneling microscopy
Authors
KeywordsComputer networks
Crystal growth
Electron microscopes
Electron microscopy
Electron optics
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 23 How to Cite?
AbstractFor heteroepitaxy of InN on GaN(0001) by molecular-beam epitaxy, the lattice misfit strain is relieved by misfit dislocations (MDs) formed at the interface between InN and GaN. Imaging by scanning tunneling microscopy (STM) of the surfaces of thin InN epifilms reveals line feature parallel to 〈112 0〉. Their contrast becomes less apparent for thicker epifilms. From the interline spacing as well as a comparison with transmission electron microscopy studies, it is suggested that they correspond to the MDs beneath the surface. The STM contrast originates from both the surface distortion caused by the local strain at MDs and the electronic states of the defects. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80858
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorCai, Yen_HK
dc.contributor.authorZhang, Len_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorWang, Nen_HK
dc.contributor.authorZhang, SBen_HK
dc.contributor.authorWu, HSen_HK
dc.date.accessioned2010-09-06T08:11:03Z-
dc.date.available2010-09-06T08:11:03Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 23en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80858-
dc.description.abstractFor heteroepitaxy of InN on GaN(0001) by molecular-beam epitaxy, the lattice misfit strain is relieved by misfit dislocations (MDs) formed at the interface between InN and GaN. Imaging by scanning tunneling microscopy (STM) of the surfaces of thin InN epifilms reveals line feature parallel to 〈112 0〉. Their contrast becomes less apparent for thicker epifilms. From the interline spacing as well as a comparison with transmission electron microscopy studies, it is suggested that they correspond to the MDs beneath the surface. The STM contrast originates from both the surface distortion caused by the local strain at MDs and the electronic states of the defects. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsAfter publication: Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2008, v. 92 n. 23, article no. 231907) and may be found at (http://apl.aip.org/resource/1/applab/v92/i23/p231907_s1).-
dc.subjectComputer networks-
dc.subjectCrystal growth-
dc.subjectElectron microscopes-
dc.subjectElectron microscopy-
dc.subjectElectron optics-
dc.titleDislocation network at InN/GaN interface revealed by scanning tunneling microscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=92&issue=23, article no. 231907&spage=&epage=&date=2008&atitle=Dislocation+network+at+InN/GaN+interface+revealed+by+scanning+tunneling+microscopyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2944145en_HK
dc.identifier.scopuseid_2-s2.0-45149100466en_HK
dc.identifier.hkuros143376en_HK
dc.identifier.hkuros160447en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-45149100466&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue23en_HK
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000256706000016-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=26643293600en_HK
dc.identifier.scopusauthoridCai, Y=24823779900en_HK
dc.identifier.scopusauthoridZhang, L=9740344900en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridWang, N=7404340430en_HK
dc.identifier.scopusauthoridZhang, SB=7409371926en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK

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