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Article: The model dielectric function: Application to GaSb and InP

TitleThe model dielectric function: Application to GaSb and InP
Authors
Issue Date2001
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 2001, v. 16 n. 11, p. 902-908 How to Cite?
AbstractIn this work we propose an analytical expression for the complex dielectric function which includes both discrete and continuum exciton effects. The model has been obtained by accurate introduction of Lorentzian broadening into Eliott's formula. Accurate introduction of broadening ensures that our model does not exhibit singularity at zero, which is present in the model proposed by Holden et al (T Holden, P Ram, F H Pollak, J L Freeouf, B X Yang and M C Tamargo 1997 Phys. Rev. B 56 4037). We have applied our model to the dielectric function data for GaSb and InP. Excellent agreement with the experimental data has been obtained for both materials. We show that agreement with the experimental data below the absorption edge can be further improved if the adjustable broadening modification is employed.
Persistent Identifierhttp://hdl.handle.net/10722/80851
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorChan, Yen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2010-09-06T08:10:58Z-
dc.date.available2010-09-06T08:10:58Z-
dc.date.issued2001en_HK
dc.identifier.citationSemiconductor Science And Technology, 2001, v. 16 n. 11, p. 902-908en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80851-
dc.description.abstractIn this work we propose an analytical expression for the complex dielectric function which includes both discrete and continuum exciton effects. The model has been obtained by accurate introduction of Lorentzian broadening into Eliott's formula. Accurate introduction of broadening ensures that our model does not exhibit singularity at zero, which is present in the model proposed by Holden et al (T Holden, P Ram, F H Pollak, J L Freeouf, B X Yang and M C Tamargo 1997 Phys. Rev. B 56 4037). We have applied our model to the dielectric function data for GaSb and InP. Excellent agreement with the experimental data has been obtained for both materials. We show that agreement with the experimental data below the absorption edge can be further improved if the adjustable broadening modification is employed.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.titleThe model dielectric function: Application to GaSb and InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0268-1242&volume=16&spage=902&epage=908&date=2001&atitle=The+model+dielectric+function:+application+to+GaSb+and+InPen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0268-1242/16/11/303en_HK
dc.identifier.scopuseid_2-s2.0-0035506440en_HK
dc.identifier.hkuros65901en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035506440&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue11en_HK
dc.identifier.spage902en_HK
dc.identifier.epage908en_HK
dc.identifier.isiWOS:000172222400006-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridChan, Y=7403676038en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK

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