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Conference Paper: A positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InP

TitleA positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InP
Authors
KeywordsCompensation defects
LEC-grown InP
Positron annihilation
Issue Date2001
PublisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Citation
12th International Conference on Positron Annihilation; Munchen, Germany, 6-12 August 2000. In Materials Science Forum, 2001, v. 363-365, p. 153-155 How to Cite?
AbstractPositron annihilation techniques have been employed to investigate the formation of vacancy type of compensation defects in undoped LEC-grown InP. N-type InP becomes p-type semiconducting by short time annealing at 700°C, and then turns to be n-type again after further annealing but with a much higher resistivity. Positron lifetime measurements show that the positron average lifetime τ av increases to a high value of 247ps for the first n-type to p-type conversion and decreases to 240ps for the following p-type to n-type conversion. τ av increases slightly and saturates at 242ps upon further annealing. The results of positron annihilation Doppler-broadening measurements are consistent with the positron lifetime measurements. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy type defects and the progressive variation of their concentrations during annealing are critical to the electrical properties of the bulk InP material.
Persistent Identifierhttp://hdl.handle.net/10722/80844
ISSN
2005 Impact Factor: 0.399
References

 

DC FieldValueLanguage
dc.contributor.authorShan, YYen_HK
dc.contributor.authorDeng, AHen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-06T08:10:54Z-
dc.date.available2010-09-06T08:10:54Z-
dc.date.issued2001en_HK
dc.identifier.citation12th International Conference on Positron Annihilation; Munchen, Germany, 6-12 August 2000. In Materials Science Forum, 2001, v. 363-365, p. 153-155en_HK
dc.identifier.issn0255-5476en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80844-
dc.description.abstractPositron annihilation techniques have been employed to investigate the formation of vacancy type of compensation defects in undoped LEC-grown InP. N-type InP becomes p-type semiconducting by short time annealing at 700°C, and then turns to be n-type again after further annealing but with a much higher resistivity. Positron lifetime measurements show that the positron average lifetime τ av increases to a high value of 247ps for the first n-type to p-type conversion and decreases to 240ps for the following p-type to n-type conversion. τ av increases slightly and saturates at 242ps upon further annealing. The results of positron annihilation Doppler-broadening measurements are consistent with the positron lifetime measurements. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy type defects and the progressive variation of their concentrations during annealing are critical to the electrical properties of the bulk InP material.en_HK
dc.languageengen_HK
dc.publisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.neten_HK
dc.relation.ispartofMaterials Science Forumen_HK
dc.rightsMaterials Science Forum. Copyright © Trans Tech Publications Ltd.en_HK
dc.subjectCompensation defectsen_HK
dc.subjectLEC-grown InPen_HK
dc.subjectPositron annihilationen_HK
dc.titleA positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InPen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=363-365&spage=153&epage=155&date=2001&atitle=A+Positron+Annihilation+Study+of+Compensation+Defects+Responsible+for+Conduction-Type+Conversions+in+LEC-Grown+InPen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0035015246en_HK
dc.identifier.hkuros56856en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035015246&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume363-365en_HK
dc.identifier.spage153en_HK
dc.identifier.epage155en_HK
dc.publisher.placeSwitzerlanden_HK
dc.description.other12th International Conference on Positron Annihilation; Munchen, Germany, 6-12 August 2000. In Materials Science Forum, 2001, v. 363-365, p. 153-155-
dc.identifier.scopusauthoridShan, YY=7203036700en_HK
dc.identifier.scopusauthoridDeng, AH=7006160354en_HK
dc.identifier.scopusauthoridZhao, YW=7406633326en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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