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Article: Deposition of hydrogenated nanocrystalline silicon carbide by ECR-CVD

TitleDeposition of hydrogenated nanocrystalline silicon carbide by ECR-CVD
Authors
Issue Date2002
PublisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/ijmpb/ijmpb.shtml
Citation
International Journal Of Modern Physics B, 2002, v. 16 n. 6-7, p. 1039-1046 How to Cite?
AbstractIn this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH 4) and methane (CH 4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.
Persistent Identifierhttp://hdl.handle.net/10722/80804
ISSN
2015 Impact Factor: 0.85
2015 SCImago Journal Rankings: 0.338
References

 

DC FieldValueLanguage
dc.contributor.authorRuslien_HK
dc.contributor.authorYu, MBen_HK
dc.contributor.authorYoon, SFen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorChew, Ken_HK
dc.contributor.authorAhn, Jen_HK
dc.contributor.authorZhang, Qen_HK
dc.date.accessioned2010-09-06T08:10:27Z-
dc.date.available2010-09-06T08:10:27Z-
dc.date.issued2002en_HK
dc.identifier.citationInternational Journal Of Modern Physics B, 2002, v. 16 n. 6-7, p. 1039-1046en_HK
dc.identifier.issn0217-9792en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80804-
dc.description.abstractIn this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH 4) and methane (CH 4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.en_HK
dc.languageengen_HK
dc.publisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/ijmpb/ijmpb.shtmlen_HK
dc.relation.ispartofInternational Journal of Modern Physics Ben_HK
dc.titleDeposition of hydrogenated nanocrystalline silicon carbide by ECR-CVDen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0217-9792&volume=16&spage=1039&epage=1046&date=2002&atitle=Deposition+of+hydrogenated+nanocrystalline+silicon+carbide+by+ECR-CVDen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0037139113en_HK
dc.identifier.hkuros77082en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037139113&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue6-7en_HK
dc.identifier.spage1039en_HK
dc.identifier.epage1046en_HK
dc.publisher.placeSingaporeen_HK
dc.identifier.scopusauthoridRusli=7409925063en_HK
dc.identifier.scopusauthoridYu, MB=8088400600en_HK
dc.identifier.scopusauthoridYoon, SF=35563567700en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridChew, K=7102902559en_HK
dc.identifier.scopusauthoridAhn, J=7403019265en_HK
dc.identifier.scopusauthoridZhang, Q=35294175000en_HK

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