File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Capacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination

TitleCapacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination
Authors
Yang, MChen, TPDing, LLiu, YZhu, FRFung, S
KeywordsCapacitance
Dielectric thin films
Elemental semiconductors
Germanium, indium compounds
MIS
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2009, v. 95 n. 9, article no. 091111 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3224191
AbstractA structure of indium tin oxide/ SiO 2 embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80803
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000269625800011
Funding AgencyGrant Number
National Research Foundation of SingaporeNRF-G-CRP 2007-01
National Natural Science Foundation of China (NSFC)60806040
Funding Information:

This work has been financially supported by the National Research Foundation of Singapore under Project No. NRF-G-CRP 2007-01. Y. Liu would like to acknowledge the National Natural Science Foundation of China (NSFC) under Project No. 60806040.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYang, Men_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorZhu, FRen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:10:26Z-
dc.date.available2010-09-06T08:10:26Z-
dc.date.issued2009en_HK
dc.identifier.citationApplied Physics Letters, 2009, v. 95 n. 9, article no. 091111-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80803-
dc.description.abstractA structure of indium tin oxide/ SiO 2 embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2009, v. 95 n. 9, article no. 091111 and may be found at https://doi.org/10.1063/1.3224191-
dc.subjectCapacitance-
dc.subjectDielectric thin films-
dc.subjectElemental semiconductors-
dc.subjectGermanium, indium compounds-
dc.subjectMIS-
dc.titleCapacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illuminationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=95, article no. 091111&spage=&epage=&date=2009&atitle=Capacitance+switching+in+SiO2+thin+film+embedded+with+Ge+nanocrystals+caused+by+ultraviolet+illumination+²½en_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3224191en_HK
dc.identifier.scopuseid_2-s2.0-69949142780en_HK
dc.identifier.hkuros167918en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-69949142780&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume95en_HK
dc.identifier.issue9en_HK
dc.identifier.spagearticle no. 091111-
dc.identifier.epagearticle no. 091111-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000269625800011-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridZhu, FR=7202254675en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0003-6951-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats