Article: Capacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination
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- Publisher Website: 10.1063/1.3224191
- Scopus: eid_2-s2.0-69949142780
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| Title | Capacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination | ||||||
|---|---|---|---|---|---|---|---|
| Authors | Yang, M3 Chen, TP3 Ding, L3 Liu, Y2 Zhu, FR4 Fung, S1 | ||||||
| Keywords | Capacitance Dielectric thin films Elemental semiconductors Germanium, indium compounds MIS | ||||||
| Issue Date | 2009 | ||||||
| Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||||
| Citation | Applied Physics Letters, 2009, v. 95 n. 9 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3224191 | ||||||
| Abstract | A structure of indium tin oxide/ SiO 2 embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge. © 2009 American Institute of Physics. | ||||||
| ISSN | 0003-6951 2011 Impact Factor: 3.844 2011 SCImago Journal Rankings: 0.398 | ||||||
| DOI | http://dx.doi.org/10.1063/1.3224191 | ||||||
| ISI Accession Number ID | WOS:000269625800011
Funding Information: This work has been financially supported by the National Research Foundation of Singapore under Project No. NRF-G-CRP 2007-01. Y. Liu would like to acknowledge the National Natural Science Foundation of China (NSFC) under Project No. 60806040. | ||||||
| References | References in Scopus |
| dc.contributor.author | Yang, M | ||||||
|---|---|---|---|---|---|---|---|
| dc.contributor.author | Chen, TP | ||||||
| dc.contributor.author | Ding, L | ||||||
| dc.contributor.author | Liu, Y | ||||||
| dc.contributor.author | Zhu, FR | ||||||
| dc.contributor.author | Fung, S | ||||||
| dc.date.accessioned | 2010-09-06T08:10:26Z | ||||||
| dc.date.available | 2010-09-06T08:10:26Z | ||||||
| dc.date.issued | 2009 | ||||||
| dc.description.abstract | A structure of indium tin oxide/ SiO 2 embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge. © 2009 American Institute of Physics. | ||||||
| dc.description.nature | published_or_final_version | ||||||
| dc.identifier.citation | Applied Physics Letters, 2009, v. 95 n. 9 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3224191 | ||||||
| dc.identifier.doi | http://dx.doi.org/10.1063/1.3224191 | ||||||
| dc.identifier.hkuros | 167918 | ||||||
| dc.identifier.isi | WOS:000269625800011
Funding Information: This work has been financially supported by the National Research Foundation of Singapore under Project No. NRF-G-CRP 2007-01. Y. Liu would like to acknowledge the National Natural Science Foundation of China (NSFC) under Project No. 60806040. | ||||||
| dc.identifier.issn | 0003-6951 2011 Impact Factor: 3.844 2011 SCImago Journal Rankings: 0.398 | ||||||
| dc.identifier.issue | 9 | ||||||
| dc.identifier.openurl | | ||||||
| dc.identifier.scopus | eid_2-s2.0-69949142780 | ||||||
| dc.identifier.uri | http://hdl.handle.net/10722/80803 | ||||||
| dc.identifier.volume | 95 | ||||||
| dc.language | eng | ||||||
| dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||||
| dc.publisher.place | United States | ||||||
| dc.relation.ispartof | Applied Physics Letters | ||||||
| dc.relation.references | References in Scopus | ||||||
| dc.rights | Applied Physics Letters. Copyright © American Institute of Physics. | ||||||
| dc.rights | Creative Commons: Attribution 3.0 Hong Kong License | ||||||
| dc.rights | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2009, v. 95, article no. 091111 and may be found at http://apl.aip.org/resource/1/applab/v95/i9/p091111_s1 | ||||||
| dc.subject | Capacitance | ||||||
| dc.subject | Dielectric thin films | ||||||
| dc.subject | Elemental semiconductors | ||||||
| dc.subject | Germanium, indium compounds | ||||||
| dc.subject | MIS | ||||||
| dc.title | Capacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination | ||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- University of Electronic Science and Technology of China
- Nanyang Technological University
- Institute of Materials Research and Engineering, A-Star, Singapore