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Article: Capacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination
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TitleCapacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination
 
AuthorsYang, M3
Chen, TP3
Ding, L3
Liu, Y2
Zhu, FR4
Fung, S1
 
KeywordsCapacitance
Dielectric thin films
Elemental semiconductors
Germanium, indium compounds
MIS
 
Issue Date2009
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 2009, v. 95 n. 9 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3224191
 
AbstractA structure of indium tin oxide/ SiO 2 embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge. © 2009 American Institute of Physics.
 
ISSN0003-6951
2013 Impact Factor: 3.515
 
DOIhttp://dx.doi.org/10.1063/1.3224191
 
ISI Accession Number IDWOS:000269625800011
Funding AgencyGrant Number
National Research Foundation of SingaporeNRF-G-CRP 2007-01
National Natural Science Foundation of China (NSFC)60806040
Funding Information:

This work has been financially supported by the National Research Foundation of Singapore under Project No. NRF-G-CRP 2007-01. Y. Liu would like to acknowledge the National Natural Science Foundation of China (NSFC) under Project No. 60806040.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorYang, M
 
dc.contributor.authorChen, TP
 
dc.contributor.authorDing, L
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorZhu, FR
 
dc.contributor.authorFung, S
 
dc.date.accessioned2010-09-06T08:10:26Z
 
dc.date.available2010-09-06T08:10:26Z
 
dc.date.issued2009
 
dc.description.abstractA structure of indium tin oxide/ SiO 2 embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge. © 2009 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationApplied Physics Letters, 2009, v. 95 n. 9 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3224191
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3224191
 
dc.identifier.eissn1077-3118
 
dc.identifier.hkuros167918
 
dc.identifier.isiWOS:000269625800011
Funding AgencyGrant Number
National Research Foundation of SingaporeNRF-G-CRP 2007-01
National Natural Science Foundation of China (NSFC)60806040
Funding Information:

This work has been financially supported by the National Research Foundation of Singapore under Project No. NRF-G-CRP 2007-01. Y. Liu would like to acknowledge the National Natural Science Foundation of China (NSFC) under Project No. 60806040.

 
dc.identifier.issn0003-6951
2013 Impact Factor: 3.515
 
dc.identifier.issue9
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-69949142780
 
dc.identifier.urihttp://hdl.handle.net/10722/80803
 
dc.identifier.volume95
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofApplied Physics Letters
 
dc.relation.referencesReferences in Scopus
 
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsCopyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2009, v. 95, article no. 091111 and may be found at http://apl.aip.org/resource/1/applab/v95/i9/p091111_s1
 
dc.subjectCapacitance
 
dc.subjectDielectric thin films
 
dc.subjectElemental semiconductors
 
dc.subjectGermanium, indium compounds
 
dc.subjectMIS
 
dc.titleCapacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination
 
dc.typeArticle
 
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<contributor.author>Zhu, FR</contributor.author>
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Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University
  4. Institute of Materials Research and Engineering, A-Star, Singapore