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Article: Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

TitleTransition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy
Authors
KeywordsDeposition rates
Gallium fluxes
Source fluxes
Wurtzite
Crystal structure
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 89 n. 15 How to Cite?
AbstractGaN exists in both wurtzite and zinc-blende phases and the growths of the two on its (0001) or (111) surfaces are achieved by choosing proper deposition conditions of molecular-beam epitaxy (MBE). At low substrate temperatures but high gallium fluxes, metastable zinc-blende GaN films are obtained, whereas at high temperatures and/or using high nitrogen fluxes, equilibrium wurtzite phase GaN epilayers resulted. This dependence of crystal structure on substrate temperature and source flux is not affected by deposition rate. Rather, the initial stage nucleation kinetics plays a primary role in determining the crystallographic structures of epitaxial GaN by MBE. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80801
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorShi, BMen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorWu, HSen_HK
dc.contributor.authorWang, Nen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2010-09-06T08:10:25Z-
dc.date.available2010-09-06T08:10:25Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 89 n. 15en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80801-
dc.description.abstractGaN exists in both wurtzite and zinc-blende phases and the growths of the two on its (0001) or (111) surfaces are achieved by choosing proper deposition conditions of molecular-beam epitaxy (MBE). At low substrate temperatures but high gallium fluxes, metastable zinc-blende GaN films are obtained, whereas at high temperatures and/or using high nitrogen fluxes, equilibrium wurtzite phase GaN epilayers resulted. This dependence of crystal structure on substrate temperature and source flux is not affected by deposition rate. Rather, the initial stage nucleation kinetics plays a primary role in determining the crystallographic structures of epitaxial GaN by MBE. © 2006 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCopyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2006, v. 89 n. 15, article no. 151921) and may be found at (http://apl.aip.org/resource/1/applab/v89/i15/p151921_s1).-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectDeposition rates-
dc.subjectGallium fluxes-
dc.subjectSource fluxes-
dc.subjectWurtzite-
dc.subjectCrystal structure-
dc.titleTransition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=89&spage=151921:1&epage=3&date=2006&atitle=Transition+between+wurtzite+and+zinc-blende+GaN:+An+effect+of+deposition+condition+of+molecular-beam+epitaxyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2360916en_HK
dc.identifier.scopuseid_2-s2.0-33749994984en_HK
dc.identifier.hkuros124220en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33749994984&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume89en_HK
dc.identifier.issue15en_HK
dc.identifier.isiWOS:000241247900047-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridShi, BM=15019647700en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.scopusauthoridWang, N=7404340430en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.citeulike1452010-

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