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Article: Structure determination of indium-induced Si(111)-In-4x1 surface by LEED Patterson inversion

TitleStructure determination of indium-induced Si(111)-In-4x1 surface by LEED Patterson inversion
Authors
Issue Date2005
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2005, v. 72 n. 24 How to Cite?
AbstractA low-energy electron diffraction (LEED) Patterson function (PF) with multiple incident angles is used to determine the structure of the indium-induced Si(111)-4x1-In reconstructed surface. The experimental PF maps were compared with ones calculated by both single scattering and the tensor-LEED method according to various theoretical models so that one can pick out the right one. It was found that the model proposed by Bunk is the best appropriate one, from which the induced PF maps are similar to the experimental ones. Further analysis of the PF spots obtained from the experimental PF maps directly generates the same model without any presupposition. It indicates that the multiple-incidence Patterson function is an effective method to determine the surface structure. Moreover, detailed atomic positions on surface were deduced from first-principles calculations and tensor-LEED I-V curve simulations. We also compared the results with those of previous investigations. Good agreement was found between them. © 2005 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/80792
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, Jen_HK
dc.contributor.authorWu, Hen_HK
dc.contributor.authorSo, Ren_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2010-09-06T08:10:19Z-
dc.date.available2010-09-06T08:10:19Z-
dc.date.issued2005en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2005, v. 72 n. 24en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80792-
dc.description.abstractA low-energy electron diffraction (LEED) Patterson function (PF) with multiple incident angles is used to determine the structure of the indium-induced Si(111)-4x1-In reconstructed surface. The experimental PF maps were compared with ones calculated by both single scattering and the tensor-LEED method according to various theoretical models so that one can pick out the right one. It was found that the model proposed by Bunk is the best appropriate one, from which the induced PF maps are similar to the experimental ones. Further analysis of the PF spots obtained from the experimental PF maps directly generates the same model without any presupposition. It indicates that the multiple-incidence Patterson function is an effective method to determine the surface structure. Moreover, detailed atomic positions on surface were deduced from first-principles calculations and tensor-LEED I-V curve simulations. We also compared the results with those of previous investigations. Good agreement was found between them. © 2005 The American Physical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.titleStructure determination of indium-induced Si(111)-In-4x1 surface by LEED Patterson inversionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=72&spage=245324&epage=&date=2005&atitle=Structure+determination+of+indium-induced+Si(111)-In-4X1+surface+by+LEED+Patterson+inversionen_HK
dc.identifier.emailWu, H: hswu@hkucc.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityWu, H=rp00813en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevB.72.245324en_HK
dc.identifier.scopuseid_2-s2.0-29644445720en_HK
dc.identifier.hkuros129592en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-29644445720&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume72en_HK
dc.identifier.issue24en_HK
dc.identifier.isiWOS:000234342900068-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, J=7701342266en_HK
dc.identifier.scopusauthoridWu, H=7405584367en_HK
dc.identifier.scopusauthoridSo, R=10539096500en_HK
dc.identifier.scopusauthoridLiu, Y=26643293600en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK

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