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Article: Influence of annealing temperature and environment on the properties of indium tin oxide thin films

TitleInfluence of annealing temperature and environment on the properties of indium tin oxide thin films
Authors
Issue Date2005
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd
Citation
Journal Of Physics D: Applied Physics, 2005, v. 38 n. 12, p. 2000-2005 How to Cite?
AbstractIndium tin oxide (ITO) thin films were deposited on glass substrates using the e-beam evaporating technique. The influence of deposition rate and post-deposition annealing on the optical properties of the films was investigated in detail. It is found that the deposition rate and annealing conditions strongly affect the optical properties of the films. The transmittance of films greatly increases with increasing annealing temperature below 300°C but drastically drops at 400°C when they are annealed in forming gas (mixed N2 and H2 gas). An interesting phenomenon observed is that the transmittance of the darkened film can recover under further 400°C annealing in air. Atomic force microscopy, x-ray diffraction and x-ray photoemission spectroscopy were employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the loss and re-incorporating of oxygen are responsible for the reversible behaviour of the ITO thin films. © 2005 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/80765
ISSN
2015 Impact Factor: 2.772
2015 SCImago Journal Rankings: 0.682
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, RXen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorKwong, Cen_HK
dc.contributor.authorLi, Sen_HK
dc.date.accessioned2010-09-06T08:10:01Z-
dc.date.available2010-09-06T08:10:01Z-
dc.date.issued2005en_HK
dc.identifier.citationJournal Of Physics D: Applied Physics, 2005, v. 38 n. 12, p. 2000-2005en_HK
dc.identifier.issn0022-3727en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80765-
dc.description.abstractIndium tin oxide (ITO) thin films were deposited on glass substrates using the e-beam evaporating technique. The influence of deposition rate and post-deposition annealing on the optical properties of the films was investigated in detail. It is found that the deposition rate and annealing conditions strongly affect the optical properties of the films. The transmittance of films greatly increases with increasing annealing temperature below 300°C but drastically drops at 400°C when they are annealed in forming gas (mixed N2 and H2 gas). An interesting phenomenon observed is that the transmittance of the darkened film can recover under further 400°C annealing in air. Atomic force microscopy, x-ray diffraction and x-ray photoemission spectroscopy were employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the loss and re-incorporating of oxygen are responsible for the reversible behaviour of the ITO thin films. © 2005 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpden_HK
dc.relation.ispartofJournal of Physics D: Applied Physicsen_HK
dc.titleInfluence of annealing temperature and environment on the properties of indium tin oxide thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-3727&volume=38&spage=2000&epage=2005&date=2005&atitle=Influence+of+annealing+temperature+and+environment+on+the+properties+of+indium+tin+oxide+thin+filmsen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0022-3727/38/12/022en_HK
dc.identifier.scopuseid_2-s2.0-21144434053en_HK
dc.identifier.hkuros98224en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-21144434053&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume38en_HK
dc.identifier.issue12en_HK
dc.identifier.spage2000en_HK
dc.identifier.epage2005en_HK
dc.identifier.isiWOS:000230886700023-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridWang, RX=22136651200en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridKwong, C=35917741900en_HK
dc.identifier.scopusauthoridLi, S=7409241368en_HK
dc.identifier.citeulike226323-

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