File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: A study of the electric field transient at the Au/semi-insulating GaAs contact under an alternating current square-pulse bias

TitleA study of the electric field transient at the Au/semi-insulating GaAs contact under an alternating current square-pulse bias
Authors
Issue Date2002
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
Citation
Journal Of Physics Condensed Matter, 2002, v. 14 n. 49, p. 13705-13715 How to Cite?
AbstractPositron lifetime spectroscopy combined with a 50 V AC applied square-wave bias has been used to probe the electric field in the 2 μm region next to an Au/SI-GaAs contact. The electric fields spatially and time averaged over the reverse half-period at different temperatures (255-295 K) and pulsing periods (∼1 ms-10 ks) have been obtained using a numerical differentiation technique. It is found that within the temperature range studied, the electric field first increases as a function of time to a maximum of about 10 kV cm-1 and then decreases, before finally saturating at the DC value of 7 kV cm-1. The increase of the electric field with time is attributed as previously to the electron emission from the EL2 defect. The subsequent electric field decrease is associated with the onset of a thermally activated process with an energy barrier of 1.03 ± 0.15 eV. This process, which causes the neutralization of the space charge region, may be tentatively attributed to the recombination centres EL5 or EL6.
Persistent Identifierhttp://hdl.handle.net/10722/80760
ISSN
2015 Impact Factor: 2.209
2015 SCImago Journal Rankings: 0.812
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorShan, YYen_HK
dc.contributor.authorDeng, AHen_HK
dc.date.accessioned2010-09-06T08:09:58Z-
dc.date.available2010-09-06T08:09:58Z-
dc.date.issued2002en_HK
dc.identifier.citationJournal Of Physics Condensed Matter, 2002, v. 14 n. 49, p. 13705-13715en_HK
dc.identifier.issn0953-8984en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80760-
dc.description.abstractPositron lifetime spectroscopy combined with a 50 V AC applied square-wave bias has been used to probe the electric field in the 2 μm region next to an Au/SI-GaAs contact. The electric fields spatially and time averaged over the reverse half-period at different temperatures (255-295 K) and pulsing periods (∼1 ms-10 ks) have been obtained using a numerical differentiation technique. It is found that within the temperature range studied, the electric field first increases as a function of time to a maximum of about 10 kV cm-1 and then decreases, before finally saturating at the DC value of 7 kV cm-1. The increase of the electric field with time is attributed as previously to the electron emission from the EL2 defect. The subsequent electric field decrease is associated with the onset of a thermally activated process with an energy barrier of 1.03 ± 0.15 eV. This process, which causes the neutralization of the space charge region, may be tentatively attributed to the recombination centres EL5 or EL6.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcmen_HK
dc.relation.ispartofJournal of Physics Condensed Matteren_HK
dc.titleA study of the electric field transient at the Au/semi-insulating GaAs contact under an alternating current square-pulse biasen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0953-8984&volume=14&spage=13705&epage=13715 &date=2002&atitle=A+study+of+the+electric+field+transient+at+the+Au/semi-insulating+GaAs+contact+under+an+alternating+current+square-pulse+biasen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0953-8984/14/49/325en_HK
dc.identifier.scopuseid_2-s2.0-0037122385en_HK
dc.identifier.hkuros75065en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037122385&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume14en_HK
dc.identifier.issue49en_HK
dc.identifier.spage13705en_HK
dc.identifier.epage13715en_HK
dc.identifier.isiWOS:000180415500030-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridShan, YY=7203036700en_HK
dc.identifier.scopusauthoridDeng, AH=7006160354en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats