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Article: An approach to optical-property profiling of a planar-waveguide structure of Si nanocrystals embedded in SiO2

TitleAn approach to optical-property profiling of a planar-waveguide structure of Si nanocrystals embedded in SiO2
Authors
Issue Date2005
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2005, v. 16 n. 11, p. 2657-2660 How to Cite?
AbstractThe structure of Si nanocrystals (nc-Si) embedded in SiO2 is promising for achieving optical gain and waveguiding with the advantage of full compatibility with the matured Si technology. In this paper, we report an approach to optical-constant profiling for such a planar waveguide structure formed by Si ion implantation into a SiO2 thin film based on spectroscopic ellipsometry (SE). With the nc-Si optical constants calculated from the Forouhi-Bloomer model and the nc-Si depth profile obtained from secondary ion mass spectroscopy (SIMS) measurements, the optical properties at a given depth are simulated with the Maxwell-Garnett effective medium approximation (EMA). Then an SE fitting is carried out, and the optical constants of nc-Si are extracted from the best fitting. Finally, the depth profile of optical constants of the structure is obtained from the EMA calculation. The result also suggests that the structure has a very low optical loss in the visible to infrared spectral range. © 2005 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/80742
ISSN
2015 Impact Factor: 3.573
2015 SCImago Journal Rankings: 1.196
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDing, Len_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorNg, CYen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:09:47Z-
dc.date.available2010-09-06T08:09:47Z-
dc.date.issued2005en_HK
dc.identifier.citationNanotechnology, 2005, v. 16 n. 11, p. 2657-2660en_HK
dc.identifier.issn0957-4484en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80742-
dc.description.abstractThe structure of Si nanocrystals (nc-Si) embedded in SiO2 is promising for achieving optical gain and waveguiding with the advantage of full compatibility with the matured Si technology. In this paper, we report an approach to optical-constant profiling for such a planar waveguide structure formed by Si ion implantation into a SiO2 thin film based on spectroscopic ellipsometry (SE). With the nc-Si optical constants calculated from the Forouhi-Bloomer model and the nc-Si depth profile obtained from secondary ion mass spectroscopy (SIMS) measurements, the optical properties at a given depth are simulated with the Maxwell-Garnett effective medium approximation (EMA). Then an SE fitting is carried out, and the optical constants of nc-Si are extracted from the best fitting. Finally, the depth profile of optical constants of the structure is obtained from the EMA calculation. The result also suggests that the structure has a very low optical loss in the visible to infrared spectral range. © 2005 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nanoen_HK
dc.relation.ispartofNanotechnologyen_HK
dc.titleAn approach to optical-property profiling of a planar-waveguide structure of Si nanocrystals embedded in SiO2en_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0957-4484&volume=16&spage=2657&epage=2660&date=2005&atitle=An+approach+to+optical-property+profiling+of+a+planar-waveguide+structure+of+Si+nanocrystals+embedded+in+SiO2en_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/16/11/031en_HK
dc.identifier.scopuseid_2-s2.0-26444551063en_HK
dc.identifier.hkuros108451en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-26444551063&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue11en_HK
dc.identifier.spage2657en_HK
dc.identifier.epage2660en_HK
dc.identifier.isiWOS:000233494500031-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.citeulike345313-

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