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Article: Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contacts

TitleProbing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contacts
Authors
KeywordsBias voltage
Epilayers
Gan epilayers
Schottky contacts
Capacitance
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 89 n. 14 How to Cite?
AbstractUnder identical preparation conditions, AuGaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80737
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, RXen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorShi, SLen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhao, DGen_HK
dc.contributor.authorYang, Hen_HK
dc.contributor.authorTao, XMen_HK
dc.date.accessioned2010-09-06T08:09:43Z-
dc.date.available2010-09-06T08:09:43Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 89 n. 14en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80737-
dc.description.abstractUnder identical preparation conditions, AuGaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. © 2006 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_HK
dc.rightsCopyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2006, v. 89 n. 14, article no. 143505) and may be found at (http://apl.aip.org/resource/1/applab/v89/i14/p143505_s1).-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.-
dc.subjectBias voltage-
dc.subjectEpilayers-
dc.subjectGan epilayers-
dc.subjectSchottky contacts-
dc.subjectCapacitance-
dc.titleProbing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contactsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=89&spage=143505: 1&epage=3&date=2006&atitle=Probing+deep+level+centers+in+GaN+epilayers+with+variable-frequency+capacitance-voltage+characteristics+of+Au/GaN+Schottky+contactsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2358207en_HK
dc.identifier.scopuseid_2-s2.0-33749489611en_HK
dc.identifier.hkuros123757en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33749489611&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume89en_HK
dc.identifier.issue14en_HK
dc.identifier.isiWOS:000241056900117-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, RX=14038407200en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridShi, SL=9532439000en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhao, DG=7403489944en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK
dc.identifier.scopusauthoridTao, XM=7202692140en_HK

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