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Article: Positron lifetime spectroscopic studies of as-grown 6H-silicon carbide

TitlePositron lifetime spectroscopic studies of as-grown 6H-silicon carbide
Authors
Issue Date2000
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2000, v. 70 n. 1, p. 33-38 How to Cite?
AbstractPositron lifetime spectroscopy has been employed to study the as-grown n-type 1.2 × 1018 cm-3 N-doped and p-type 1.8 × 1018 cm-3 Al-doped 6H-silicon carbide in the temperature range 10 K-300 K. For the p-type material, a positron trapping site, which has a lifetime of 225 ± 11 ps, was found and is attributed to positron annihilating from the VSi VC divacancy-related defect having a neutral charge. For the case of the n-type material, a positron trapping centre having a lifetime of 200±9 ps, attributed to a VSi-related defect, and a shallow trap were observed. The shallow trap, having binding energy of 18 meV was attributed to Rydberg-like states resulting from positron binding with a negative ion.
Persistent Identifierhttp://hdl.handle.net/10722/80731
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorDeng, AHen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-06T08:09:40Z-
dc.date.available2010-09-06T08:09:40Z-
dc.date.issued2000en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2000, v. 70 n. 1, p. 33-38en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80731-
dc.description.abstractPositron lifetime spectroscopy has been employed to study the as-grown n-type 1.2 × 1018 cm-3 N-doped and p-type 1.8 × 1018 cm-3 Al-doped 6H-silicon carbide in the temperature range 10 K-300 K. For the p-type material, a positron trapping site, which has a lifetime of 225 ± 11 ps, was found and is attributed to positron annihilating from the VSi VC divacancy-related defect having a neutral charge. For the case of the n-type material, a positron trapping centre having a lifetime of 200±9 ps, attributed to a VSi-related defect, and a shallow trap were observed. The shallow trap, having binding energy of 18 meV was attributed to Rydberg-like states resulting from positron binding with a negative ion.en_HK
dc.languageengen_HK
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.titlePositron lifetime spectroscopic studies of as-grown 6H-silicon carbideen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0947-8396&volume=70&spage=33&epage=38&date=2000&atitle=Positron+Lifetime+Spectroscopic+Studies+of+AS-Grown+6H-Silicon+Carbideen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s003390050007en_HK
dc.identifier.scopuseid_2-s2.0-0033716049en_HK
dc.identifier.hkuros47680en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033716049&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume70en_HK
dc.identifier.issue1en_HK
dc.identifier.spage33en_HK
dc.identifier.epage38en_HK
dc.identifier.isiWOS:000084701600007-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridDeng, AH=7006160354en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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