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Article: The response of transport properties to static electric field in La0.7Ce0.3MnO3 epitaxial thin films

TitleThe response of transport properties to static electric field in La0.7Ce0.3MnO3 epitaxial thin films
Authors
KeywordsCarrier concentration
Electric field effects
Lanthanum alloys
Phase separation
Transport properties
Issue Date2007
PublisherInstitute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20
Citation
IEEE Transactions on Magnetics, 2007, v. 43 n. 6, p. 3058-3060 How to Cite?
AbstractWe investigated the influence of static electric field on the transport properties in La0.7Ce0.3MnO3 epitaxial thin films by using a simple field effect configuration (FEC), which was formed on a single layer film. Substrates act as gates and films as channels. Such an easily manipulative technique avoids many possible problems appeared in multilayer structures, such as poor interface and severe inter-diffusion, which may influence the intrinsic characteristics of investigated targets. One knows that tetravalence-doped La0.7Ce0.3MnO3 (LEMO) systems exhibit metal-insulator transition and ferromagnetic behavior, similar to the ditravalence-doped La0.7Ca0.3MnO3. However, for the conductive mechanism of LEMO, strong controversies have existed for a long time with whether it is intrinsically electron-type or hole-type. Our experiments give evidence of the hole-type nature in LEMO. In the device with LEMO as channel and LaAlO3(LAO) as gate, applied positive bias poles gate and induces charge at the area between gate and channel. The polarized charge in the gate is compensated by inducing electrons in the channel. If LEMO is of electron-type, the increased carrier density would cause a decease of channel resistance. However, we experimentally found the channel resistance remarkably increases upon a positive bias. Such a fact is completely the same as the behavior observed in hole-doped La0 7Ca0.3MnO3channel, and thus strongly supports the hole-type nature in LEMO channel. Furthermore, we found that the large field effect in LEMO is nonlinear and polarity dependent on the applied bias. A percolative phase separation picture is taking into account to interpret the observed field effect.
Persistent Identifierhttp://hdl.handle.net/10722/80713
ISSN
2015 Impact Factor: 1.277
2015 SCImago Journal Rankings: 0.602
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGao, Jen_HK
dc.contributor.authorHu, FXen_HK
dc.date.accessioned2010-09-06T08:09:28Z-
dc.date.available2010-09-06T08:09:28Z-
dc.date.issued2007en_HK
dc.identifier.citationIEEE Transactions on Magnetics, 2007, v. 43 n. 6, p. 3058-3060en_HK
dc.identifier.issn0018-9464en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80713-
dc.description.abstractWe investigated the influence of static electric field on the transport properties in La0.7Ce0.3MnO3 epitaxial thin films by using a simple field effect configuration (FEC), which was formed on a single layer film. Substrates act as gates and films as channels. Such an easily manipulative technique avoids many possible problems appeared in multilayer structures, such as poor interface and severe inter-diffusion, which may influence the intrinsic characteristics of investigated targets. One knows that tetravalence-doped La0.7Ce0.3MnO3 (LEMO) systems exhibit metal-insulator transition and ferromagnetic behavior, similar to the ditravalence-doped La0.7Ca0.3MnO3. However, for the conductive mechanism of LEMO, strong controversies have existed for a long time with whether it is intrinsically electron-type or hole-type. Our experiments give evidence of the hole-type nature in LEMO. In the device with LEMO as channel and LaAlO3(LAO) as gate, applied positive bias poles gate and induces charge at the area between gate and channel. The polarized charge in the gate is compensated by inducing electrons in the channel. If LEMO is of electron-type, the increased carrier density would cause a decease of channel resistance. However, we experimentally found the channel resistance remarkably increases upon a positive bias. Such a fact is completely the same as the behavior observed in hole-doped La0 7Ca0.3MnO3channel, and thus strongly supports the hole-type nature in LEMO channel. Furthermore, we found that the large field effect in LEMO is nonlinear and polarity dependent on the applied bias. A percolative phase separation picture is taking into account to interpret the observed field effect.-
dc.languageengen_HK
dc.publisherInstitute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20en_HK
dc.relation.ispartofIEEE Transactions on Magneticsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_HK
dc.rights©2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectCarrier concentration-
dc.subjectElectric field effects-
dc.subjectLanthanum alloys-
dc.subjectPhase separation-
dc.subjectTransport properties-
dc.titleThe response of transport properties to static electric field in La0.7Ce0.3MnO3 epitaxial thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9464&volume=43&spage=3058&epage=3060&date=2007&atitle=The+response+of+transport+properties+to+static+electric+field+in+La0.7Ce0.3MnO3+epitaxial+thin+filmsen_HK
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.identifier.emailHu, FX: fxhu2002@hku.hken_HK
dc.identifier.authorityGao, J=rp00699en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TMAG.2007.893116-
dc.identifier.scopuseid_2-s2.0-34248998895-
dc.identifier.hkuros141346en_HK
dc.identifier.volume43-
dc.identifier.issue6-
dc.identifier.spage3058-
dc.identifier.epage3060-
dc.identifier.isiWOS:000246706200322-
dc.publisher.placeUnited States-

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