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Conference Paper: Application of optical and luminescent techniques to the characterization of oxide thin films

TitleApplication of optical and luminescent techniques to the characterization of oxide thin films
Authors
KeywordsCharacterization
Luminescence
Oxide thin films
hotoconductivity
Trap
Issue Date2006
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
The 8th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures and the 13th International Congress on Thin Films (ACSIN8 / ICTF13), Stockholm, Sweden, 20-23 June 2005. In Applied Surface Science, 2006, v. 252 n. 15, p. 5590-5593 How to Cite?
AbstractThe interaction between light and electrons in oxide compounds forms the basis for many interesting and practical effects, which are related to microstructure, energy band, traps, carrier transport and others. Thin films of oxides like WO3, Ga2O3, Y2O3 and SrTiO3 were investigated using various improved optical and luminescent techniques. The home-made systems for optical and luminescent measurements were described in detail. The facilities of photo-Hall and photoconductivity transients have been proven to be powerful tools in the studies, which allow us to perform photoinduced process and relaxation measurements over a wide time range from 10−8 to 104 s. Furthermore, we extended the measurement capabilities of the commercial luminoscope by using an interferometer system with optical fiber and illuminance meter instead of an optical microscope. The cathodoluminescent measurements can be performed at a relative high pressure (20–60 mTorr) compared to ultra-high-vacuum condition of most commercial products. Luminescent characterization was employed as a probe to study doping ions, oxygen vacancies, trap and/or exciton levels in oxide thin films. Our results suggest that various traps and/or excitons in thin films of WO3, Ga2O3 and SrTiO3 involve in the process of photoconductivity relaxation and emission.
Persistent Identifierhttp://hdl.handle.net/10722/80697
ISSN
2015 Impact Factor: 3.15
2015 SCImago Journal Rankings: 0.930
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHao, JHen_HK
dc.contributor.authorGao, Jen_HK
dc.date.accessioned2010-09-06T08:09:18Z-
dc.date.available2010-09-06T08:09:18Z-
dc.date.issued2006en_HK
dc.identifier.citationThe 8th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures and the 13th International Congress on Thin Films (ACSIN8 / ICTF13), Stockholm, Sweden, 20-23 June 2005. In Applied Surface Science, 2006, v. 252 n. 15, p. 5590-5593en_HK
dc.identifier.issn0169-4332en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80697-
dc.description.abstractThe interaction between light and electrons in oxide compounds forms the basis for many interesting and practical effects, which are related to microstructure, energy band, traps, carrier transport and others. Thin films of oxides like WO3, Ga2O3, Y2O3 and SrTiO3 were investigated using various improved optical and luminescent techniques. The home-made systems for optical and luminescent measurements were described in detail. The facilities of photo-Hall and photoconductivity transients have been proven to be powerful tools in the studies, which allow us to perform photoinduced process and relaxation measurements over a wide time range from 10−8 to 104 s. Furthermore, we extended the measurement capabilities of the commercial luminoscope by using an interferometer system with optical fiber and illuminance meter instead of an optical microscope. The cathodoluminescent measurements can be performed at a relative high pressure (20–60 mTorr) compared to ultra-high-vacuum condition of most commercial products. Luminescent characterization was employed as a probe to study doping ions, oxygen vacancies, trap and/or exciton levels in oxide thin films. Our results suggest that various traps and/or excitons in thin films of WO3, Ga2O3 and SrTiO3 involve in the process of photoconductivity relaxation and emission.-
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsuscen_HK
dc.relation.ispartofApplied Surface Scienceen_HK
dc.rightsApplied Surface Science. Copyright © Elsevier BV.en_HK
dc.subjectCharacterization-
dc.subjectLuminescence-
dc.subjectOxide thin films-
dc.subjecthotoconductivity-
dc.subjectTrap-
dc.titleApplication of optical and luminescent techniques to the characterization of oxide thin filmsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0169-4332&volume=252&spage=5590&epage=5593&date=2006&atitle=Application+of+optical+and+luminescent+techniques+to+the+characterization+of+oxide+thin+filmsen_HK
dc.identifier.emailHao, JH: jhhao@hku.hken_HK
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.identifier.authorityGao, J=rp00699en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.apsusc.2005.12.135-
dc.identifier.scopuseid_2-s2.0-33746787654-
dc.identifier.hkuros112173en_HK
dc.identifier.hkuros116564-
dc.identifier.issue15-
dc.identifier.isiWOS:000238623300085-

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