File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1016/j.mseb.2004.12.008
- Scopus: eid_2-s2.0-14044271431
- WOS: WOS:000227770300013
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Ferromagnetism in Mn and Cr doped GaN by thermal diffusion
Title | Ferromagnetism in Mn and Cr doped GaN by thermal diffusion |
---|---|
Authors | |
Keywords | Cr Ferromagnetism GaN Mn Thermal doping |
Issue Date | 2005 |
Publisher | Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseb |
Citation | Materials Science And Engineering B: Solid-State Materials For Advanced Technology, 2005, v. 117 n. 3, p. 292-295 How to Cite? |
Abstract | Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. X-ray diffraction measurements revealed no secondary phase in the samples. Experiments using superconducting quantum interference device (SQUID) showed that the samples were ferromagnetic at 5 and 300 K, implying the Curie temperature to be around or over 300 K, despite their n-type conductivity. © 2004 Elsevier B.V. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/80696 |
ISSN | 2023 Impact Factor: 3.9 2023 SCImago Journal Rankings: 0.647 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cai, XM | en_HK |
dc.contributor.author | Djurišić, AB | en_HK |
dc.contributor.author | Xie, MH | en_HK |
dc.contributor.author | Liu, H | en_HK |
dc.contributor.author | Zhang, XX | en_HK |
dc.contributor.author | Zhu, JJ | en_HK |
dc.contributor.author | Yang, H | en_HK |
dc.date.accessioned | 2010-09-06T08:09:17Z | - |
dc.date.available | 2010-09-06T08:09:17Z | - |
dc.date.issued | 2005 | en_HK |
dc.identifier.citation | Materials Science And Engineering B: Solid-State Materials For Advanced Technology, 2005, v. 117 n. 3, p. 292-295 | en_HK |
dc.identifier.issn | 0921-5107 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80696 | - |
dc.description.abstract | Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. X-ray diffraction measurements revealed no secondary phase in the samples. Experiments using superconducting quantum interference device (SQUID) showed that the samples were ferromagnetic at 5 and 300 K, implying the Curie temperature to be around or over 300 K, despite their n-type conductivity. © 2004 Elsevier B.V. All rights reserved. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseb | en_HK |
dc.relation.ispartof | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | en_HK |
dc.subject | Cr | en_HK |
dc.subject | Ferromagnetism | en_HK |
dc.subject | GaN | en_HK |
dc.subject | Mn | en_HK |
dc.subject | Thermal doping | en_HK |
dc.title | Ferromagnetism in Mn and Cr doped GaN by thermal diffusion | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0921-5093&volume=117&spage=292&epage=295&date=2005&atitle=Ferromagnetism+in+Mn+and+Cr+doped+GaN+by+thermal+diffusion | en_HK |
dc.identifier.email | Djurišić, AB: dalek@hku.hk | en_HK |
dc.identifier.email | Xie, MH: mhxie@hku.hk | en_HK |
dc.identifier.authority | Djurišić, AB=rp00690 | en_HK |
dc.identifier.authority | Xie, MH=rp00818 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.mseb.2004.12.008 | en_HK |
dc.identifier.scopus | eid_2-s2.0-14044271431 | en_HK |
dc.identifier.hkuros | 97379 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-14044271431&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 117 | en_HK |
dc.identifier.issue | 3 | en_HK |
dc.identifier.spage | 292 | en_HK |
dc.identifier.epage | 295 | en_HK |
dc.identifier.isi | WOS:000227770300013 | - |
dc.publisher.place | Switzerland | en_HK |
dc.identifier.scopusauthorid | Cai, XM=8923610200 | en_HK |
dc.identifier.scopusauthorid | Djurišić, AB=7004904830 | en_HK |
dc.identifier.scopusauthorid | Xie, MH=7202255416 | en_HK |
dc.identifier.scopusauthorid | Liu, H=36066241300 | en_HK |
dc.identifier.scopusauthorid | Zhang, XX=36044634000 | en_HK |
dc.identifier.scopusauthorid | Zhu, JJ=8690501700 | en_HK |
dc.identifier.scopusauthorid | Yang, H=35493514000 | en_HK |
dc.identifier.issnl | 0921-5107 | - |