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Article: Influence of capping layer and atomic interdiffusion on the strain distribution in single and double self-assembled InAs/GaAs quantum dots

TitleInfluence of capping layer and atomic interdiffusion on the strain distribution in single and double self-assembled InAs/GaAs quantum dots
Authors
KeywordsIndium arsenide
Interfaces (materials)
Semiconducting gallium arsenide
Strain
Wetting
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 8 How to Cite?
AbstractThe strain distribution in single and double self-assembled InAsGaAs quantum dots is theoretically investigated by using a valence-force-field model. The results show strong influence of the capping conditions on the strain distribution in individual and stacked dots with wetting layers. In particular, the intermixing of atoms is incorporated into the strain calculations, leading to a conclusion that the atomic intermixing can notably modify the strain profiles near the interfaces of the stacked dot system. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80694
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYang, Men_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorWang, Jen_HK
dc.date.accessioned2010-09-06T08:09:16Z-
dc.date.available2010-09-06T08:09:16Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 8en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80694-
dc.description.abstractThe strain distribution in single and double self-assembled InAsGaAs quantum dots is theoretically investigated by using a valence-force-field model. The results show strong influence of the capping conditions on the strain distribution in individual and stacked dots with wetting layers. In particular, the intermixing of atoms is incorporated into the strain calculations, leading to a conclusion that the atomic intermixing can notably modify the strain profiles near the interfaces of the stacked dot system. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_HK
dc.rightsCopyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2008, v. 92 n. 8, article no. 083112) and may be found at (http://apl.aip.org/resource/1/applab/v92/i8/p083112_s1).-
dc.subjectIndium arsenide-
dc.subjectInterfaces (materials)-
dc.subjectSemiconducting gallium arsenide-
dc.subjectStrain-
dc.subjectWetting-
dc.titleInfluence of capping layer and atomic interdiffusion on the strain distribution in single and double self-assembled InAs/GaAs quantum dotsen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2841065en_HK
dc.identifier.scopuseid_2-s2.0-40049090825en_HK
dc.identifier.hkuros141607en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-40049090825&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue8en_HK
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000254297300082-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYang, M=7404926913en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridWang, J=37262424300en_HK

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