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Article: Silicon and carbon vacancies in silicon carbide studied by coincidence Doppler broadening spectroscopy

TitleSilicon and carbon vacancies in silicon carbide studied by coincidence Doppler broadening spectroscopy
Authors
Issue Date2007
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628
Citation
Physica Status Solidi (C) Current Topics In Solid State Physics, 2007, v. 4 n. 10, p. 3676-3679 How to Cite?
AbstractDeconvoluted Coincidence Doppler Broadening Spectroscopy (CDBS) measurements have been made on 300 keV and 1.7 MeV electron irradiated SiC The lower energy irradiation produces only carbon vacancies while the higher energy produces both carbon and silicon vacancies. This distinction is easily seen in the high (20-35 mrad) momentum range where a clear atomic signal of Si is seen for the carbon vacancy. In addition to the higher momentum region the higher resolution of the deconvoluted CDBS spectra show structural information relating to the crystal lattice. The autocorrelation function obtained for positrons trapped at carbon vacancies is found to show a stronger lattice signal indicative of a more extended positron wave function and a less strongly bound state. Conversely that positron trapped at the silicon vacancy shows a more damped autocorrelation function characteristic of a more spatially confined positron state. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
Persistent Identifierhttp://hdl.handle.net/10722/80693
ISSN
2015 SCImago Journal Rankings: 0.392
References

 

DC FieldValueLanguage
dc.contributor.authorZhang, JDen_HK
dc.contributor.authorCheng, CCen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:09:15Z-
dc.date.available2010-09-06T08:09:15Z-
dc.date.issued2007en_HK
dc.identifier.citationPhysica Status Solidi (C) Current Topics In Solid State Physics, 2007, v. 4 n. 10, p. 3676-3679en_HK
dc.identifier.issn1862-6351en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80693-
dc.description.abstractDeconvoluted Coincidence Doppler Broadening Spectroscopy (CDBS) measurements have been made on 300 keV and 1.7 MeV electron irradiated SiC The lower energy irradiation produces only carbon vacancies while the higher energy produces both carbon and silicon vacancies. This distinction is easily seen in the high (20-35 mrad) momentum range where a clear atomic signal of Si is seen for the carbon vacancy. In addition to the higher momentum region the higher resolution of the deconvoluted CDBS spectra show structural information relating to the crystal lattice. The autocorrelation function obtained for positrons trapped at carbon vacancies is found to show a stronger lattice signal indicative of a more extended positron wave function and a less strongly bound state. Conversely that positron trapped at the silicon vacancy shows a more damped autocorrelation function characteristic of a more spatially confined positron state. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.en_HK
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628en_HK
dc.relation.ispartofPhysica Status Solidi (C) Current Topics in Solid State Physicsen_HK
dc.titleSilicon and carbon vacancies in silicon carbide studied by coincidence Doppler broadening spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1610-1634&volume=4&spage=3676&epage=3679&date=2007&atitle=Silicon+and+carbon+vacancies+in+silicon+carbide+studied+by+coincidence+Doppler+broadening+spectroscopyen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssc.200675767en_HK
dc.identifier.scopuseid_2-s2.0-49949116350en_HK
dc.identifier.hkuros136990en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-49949116350&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume4en_HK
dc.identifier.issue10en_HK
dc.identifier.spage3676en_HK
dc.identifier.epage3679en_HK
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridZhang, JD=8555988600en_HK
dc.identifier.scopusauthoridCheng, CC=23003304100en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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