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Article: Doppler-broadening measurements of microvoids at the Au/GaAs interface

TitleDoppler-broadening measurements of microvoids at the Au/GaAs interface
Authors
Keywords68.35.-p
78.70.Bj
Issue Date1995
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A Materials Science & Processing, 1995, v. 60 n. 6, p. 545-549 How to Cite?
AbstractRecent positron lifetime studies made on the Au/GaAs interface with an applied electric field returning a significant fraction of bulk implanted positrons to the interface have revealed the presence of microvoids(≈ 1 nm diameter) at the interface. In this work an attempt has been made to study these microvoids by observing the Doppler broadening on the annihilation radiation coming from them. This is done both by observing the S-parameter as a function of applied bias and by applying the generalized least-squares method to the deconvolution of the annihilation radiation lineshape. The general conclusion is that the Doppler-broadened data are consistent with the majority of positrons trapping into microvoids, probably associated with grain boundaries. The data suggest that these open volume defects are more associated with the Au film rather than the Au-Ga alloyed interfacial region. © 1995 Springer-Verlag.
Persistent Identifierhttp://hdl.handle.net/10722/80689
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorShan, YYen_HK
dc.contributor.authorPanda, BKen_HK
dc.contributor.authorFleischer, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:09:12Z-
dc.date.available2010-09-06T08:09:12Z-
dc.date.issued1995en_HK
dc.identifier.citationApplied Physics A Materials Science & Processing, 1995, v. 60 n. 6, p. 545-549en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80689-
dc.description.abstractRecent positron lifetime studies made on the Au/GaAs interface with an applied electric field returning a significant fraction of bulk implanted positrons to the interface have revealed the presence of microvoids(≈ 1 nm diameter) at the interface. In this work an attempt has been made to study these microvoids by observing the Doppler broadening on the annihilation radiation coming from them. This is done both by observing the S-parameter as a function of applied bias and by applying the generalized least-squares method to the deconvolution of the annihilation radiation lineshape. The general conclusion is that the Doppler-broadened data are consistent with the majority of positrons trapping into microvoids, probably associated with grain boundaries. The data suggest that these open volume defects are more associated with the Au film rather than the Au-Ga alloyed interfacial region. © 1995 Springer-Verlag.en_HK
dc.languageengen_HK
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A Materials Science & Processingen_HK
dc.subject68.35.-pen_HK
dc.subject78.70.Bjen_HK
dc.titleDoppler-broadening measurements of microvoids at the Au/GaAs interfaceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0947-8396&volume=60&spage=545&epage=549&date=1995&atitle=Doppler:+broadening+measurements+of+microvoids+at+the+Au/GaAs+interfaceen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/BF01538527en_HK
dc.identifier.scopuseid_2-s2.0-0029324498en_HK
dc.identifier.hkuros9261en_HK
dc.identifier.volume60en_HK
dc.identifier.issue6en_HK
dc.identifier.spage545en_HK
dc.identifier.epage549en_HK
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridShan, YY=7203036700en_HK
dc.identifier.scopusauthoridPanda, BK=22963418500en_HK
dc.identifier.scopusauthoridFleischer, S=7103394445en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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