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Article: Positron deep level transient spectroscopy - A new application of positron annihilation to semiconductor physics

TitlePositron deep level transient spectroscopy - A new application of positron annihilation to semiconductor physics
Authors
Issue Date1997
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
Applied Surface Science, 1997, v. 116, p. 121-128 How to Cite?
AbstractRecent positron mobility and lifetime measurements made on ac-biased metal on semi-insulating GaAs junctions, which have identified the native EL2 defect through a determination of the characteristic ionization energy of the donor level, are reviewed. It is shown that these measurements point towards a new spectroscopy, tentatively named positron-DLTS (deep level transient spectroscopy), that is the direct complement to conventional DLTS in that it monitors transients in the electric field of the depletion region rather than the inversely related depletion width, as deep levels undergo ionization. In this new spectroscopy, which may be applied to doped material by use of a suitable positron beam, electric field transients are monitored through the Doppler shift of the annihilation radiation resulting from the drift velocity of the positron in the depletion region. Two useful extensions of the new spectroscopy beyond conventional capacitance-DLTS are suggested. The first is that in some instances information on the microstructure of the defect causing the deep level may be inferred from the sensitivity of the positron to vacancy defects of negative and neutral charge states. The second is that the positron annihilation technique is intrinsically much faster than conventional DLTS with the capability of observing transients some 106 times faster, thus allowing deep levels (and even shallow levels) to be investigated without problems associated with carrier freeze-out.
Persistent Identifierhttp://hdl.handle.net/10722/80671
ISSN
2015 Impact Factor: 3.15
2015 SCImago Journal Rankings: 0.930
References

 

DC FieldValueLanguage
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorAu, HLen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorReddy, CVen_HK
dc.contributor.authorDeng, AHen_HK
dc.contributor.authorPanda, BKen_HK
dc.date.accessioned2010-09-06T08:09:01Z-
dc.date.available2010-09-06T08:09:01Z-
dc.date.issued1997en_HK
dc.identifier.citationApplied Surface Science, 1997, v. 116, p. 121-128en_HK
dc.identifier.issn0169-4332en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80671-
dc.description.abstractRecent positron mobility and lifetime measurements made on ac-biased metal on semi-insulating GaAs junctions, which have identified the native EL2 defect through a determination of the characteristic ionization energy of the donor level, are reviewed. It is shown that these measurements point towards a new spectroscopy, tentatively named positron-DLTS (deep level transient spectroscopy), that is the direct complement to conventional DLTS in that it monitors transients in the electric field of the depletion region rather than the inversely related depletion width, as deep levels undergo ionization. In this new spectroscopy, which may be applied to doped material by use of a suitable positron beam, electric field transients are monitored through the Doppler shift of the annihilation radiation resulting from the drift velocity of the positron in the depletion region. Two useful extensions of the new spectroscopy beyond conventional capacitance-DLTS are suggested. The first is that in some instances information on the microstructure of the defect causing the deep level may be inferred from the sensitivity of the positron to vacancy defects of negative and neutral charge states. The second is that the positron annihilation technique is intrinsically much faster than conventional DLTS with the capability of observing transients some 106 times faster, thus allowing deep levels (and even shallow levels) to be investigated without problems associated with carrier freeze-out.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsuscen_HK
dc.relation.ispartofApplied Surface Scienceen_HK
dc.rightsApplied Surface Science. Copyright © Elsevier BV.en_HK
dc.titlePositron deep level transient spectroscopy - A new application of positron annihilation to semiconductor physicsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0169-4332&volume=116&spage=121&epage=128&date=1997&atitle=Positron+Deep+Level+Transient+Spectroscopy+---+A+New+Application+of+Positron+Annihilation+to+Semiconductor+Physicsen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0031547814en_HK
dc.identifier.hkuros22662en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031547814&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume116en_HK
dc.identifier.spage121en_HK
dc.identifier.epage128en_HK
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridAu, HL=7004152230en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridReddy, CV=8621657000en_HK
dc.identifier.scopusauthoridDeng, AH=7006160354en_HK
dc.identifier.scopusauthoridPanda, BK=22963418500en_HK

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