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Article: Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film
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TitleQuenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film
 
AuthorsCen, ZH3
Chen, TP3
Ding, L3 4
Liu, Y2
Liu, Z3
Yang, M3
Wong, JI3
Goh, WP5
Zhu, FR5
Fung, S1
 
KeywordsCharge trapping
Electroluminescence quenching
Reactivation
Si-implanted silicon nitride
 
Issue Date2009
 
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
 
CitationIeee Transactions On Electron Devices, 2009, v. 56 n. 12, p. 3212-3217 [How to Cite?]
DOI: http://dx.doi.org/10.1109/TED.2009.2033009
 
AbstractIn this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices. © 2009 IEEE.
 
ISSN0018-9383
2012 Impact Factor: 2.062
2012 SCImago Journal Rankings: 1.261
 
DOIhttp://dx.doi.org/10.1109/TED.2009.2033009
 
ISI Accession Number IDWOS:000271951700043
Funding AgencyGrant Number
National Research Foundation of SingaporeNRF-G-CRP 2007-01
NSFC60806040
Funding Information:

Manuscript received July 2, 2009; revised August 26, 2009. First published October 23, 2009; current version published November 20, 2009. This work was supported by the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01. The work of Y. Liu was supported by NSFC under Project 60806040. The review of this brief was arranged by Editor L. Lunardi.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorCen, ZH
 
dc.contributor.authorChen, TP
 
dc.contributor.authorDing, L
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorLiu, Z
 
dc.contributor.authorYang, M
 
dc.contributor.authorWong, JI
 
dc.contributor.authorGoh, WP
 
dc.contributor.authorZhu, FR
 
dc.contributor.authorFung, S
 
dc.date.accessioned2010-09-06T08:08:56Z
 
dc.date.available2010-09-06T08:08:56Z
 
dc.date.issued2009
 
dc.description.abstractIn this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices. © 2009 IEEE.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationIeee Transactions On Electron Devices, 2009, v. 56 n. 12, p. 3212-3217 [How to Cite?]
DOI: http://dx.doi.org/10.1109/TED.2009.2033009
 
dc.identifier.doihttp://dx.doi.org/10.1109/TED.2009.2033009
 
dc.identifier.epage3217
 
dc.identifier.hkuros169430
 
dc.identifier.isiWOS:000271951700043
Funding AgencyGrant Number
National Research Foundation of SingaporeNRF-G-CRP 2007-01
NSFC60806040
Funding Information:

Manuscript received July 2, 2009; revised August 26, 2009. First published October 23, 2009; current version published November 20, 2009. This work was supported by the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01. The work of Y. Liu was supported by NSFC under Project 60806040. The review of this brief was arranged by Editor L. Lunardi.

 
dc.identifier.issn0018-9383
2012 Impact Factor: 2.062
2012 SCImago Journal Rankings: 1.261
 
dc.identifier.issue12
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-79959198293
 
dc.identifier.spage3212
 
dc.identifier.urihttp://hdl.handle.net/10722/80664
 
dc.identifier.volume56
 
dc.languageeng
 
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
 
dc.publisher.placeUnited States
 
dc.relation.ispartofIEEE Transactions on Electron Devices
 
dc.relation.referencesReferences in Scopus
 
dc.rightsIEEE Transactions on Electron Devices. Copyright © IEEE.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rights©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
 
dc.subjectCharge trapping
 
dc.subjectElectroluminescence quenching
 
dc.subjectReactivation
 
dc.subjectSi-implanted silicon nitride
 
dc.titleQuenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University
  4. null
  5. Institute of Materials Research and Engineering, A-Star, Singapore