Article: Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film
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- Publisher Website: 10.1109/TED.2009.2033009
- Scopus: eid_2-s2.0-79959198293
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| Title | Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film |
|---|---|
| Authors | Cen, ZH3 Chen, TP3 Ding, L3 4 Liu, Y2 Liu, Z3 Yang, M3 Wong, JI3 Goh, WP5 Zhu, FR5 Fung, S1 |
| Keywords | Charge trapping Electroluminescence quenching Reactivation Si-implanted silicon nitride |
| Issue Date | 2009 |
| Publisher | I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 |
| Citation | Ieee Transactions On Electron Devices, 2009, v. 56 n. 12, p. 3212-3217 [How to Cite?] DOI: http://dx.doi.org/10.1109/TED.2009.2033009 |
| Abstract | In this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices. © 2009 IEEE. |
| ISSN | 0018-9383 2011 Impact Factor: 2.318 2011 SCImago Journal Rankings: 0.304 |
| DOI | http://dx.doi.org/10.1109/TED.2009.2033009 |
| References | References in Scopus |
| dc.contributor.author | Cen, ZH | ||||||
|---|---|---|---|---|---|---|---|
| dc.contributor.author | Chen, TP | ||||||
| dc.contributor.author | Ding, L | ||||||
| dc.contributor.author | Liu, Y | ||||||
| dc.contributor.author | Liu, Z | ||||||
| dc.contributor.author | Yang, M | ||||||
| dc.contributor.author | Wong, JI | ||||||
| dc.contributor.author | Goh, WP | ||||||
| dc.contributor.author | Zhu, FR | ||||||
| dc.contributor.author | Fung, S | ||||||
| dc.date.accessioned | 2010-09-06T08:08:56Z | ||||||
| dc.date.available | 2010-09-06T08:08:56Z | ||||||
| dc.date.issued | 2009 | ||||||
| dc.description.abstract | In this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices. © 2009 IEEE. | ||||||
| dc.description.nature | published_or_final_version | ||||||
| dc.identifier.citation | Ieee Transactions On Electron Devices, 2009, v. 56 n. 12, p. 3212-3217 [How to Cite?] DOI: http://dx.doi.org/10.1109/TED.2009.2033009 | ||||||
| dc.identifier.doi | http://dx.doi.org/10.1109/TED.2009.2033009 | ||||||
| dc.identifier.epage | 3217 | ||||||
| dc.identifier.hkuros | 169430 | ||||||
| dc.identifier.isi | WOS:000271951700043
Funding Information: Manuscript received July 2, 2009; revised August 26, 2009. First published October 23, 2009; current version published November 20, 2009. This work was supported by the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01. The work of Y. Liu was supported by NSFC under Project 60806040. The review of this brief was arranged by Editor L. Lunardi. | ||||||
| dc.identifier.issn | 0018-9383 2011 Impact Factor: 2.318 2011 SCImago Journal Rankings: 0.304 | ||||||
| dc.identifier.issue | 12 | ||||||
| dc.identifier.openurl | | ||||||
| dc.identifier.scopus | eid_2-s2.0-79959198293 | ||||||
| dc.identifier.spage | 3212 | ||||||
| dc.identifier.uri | http://hdl.handle.net/10722/80664 | ||||||
| dc.identifier.volume | 56 | ||||||
| dc.language | eng | ||||||
| dc.publisher | I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 | ||||||
| dc.publisher.place | United States | ||||||
| dc.relation.ispartof | IEEE Transactions on Electron Devices | ||||||
| dc.relation.references | References in Scopus | ||||||
| dc.rights | IEEE Transactions on Electron Devices. Copyright © IEEE. | ||||||
| dc.rights | Creative Commons: Attribution 3.0 Hong Kong License | ||||||
| dc.rights | ©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | ||||||
| dc.subject | Charge trapping | ||||||
| dc.subject | Electroluminescence quenching | ||||||
| dc.subject | Reactivation | ||||||
| dc.subject | Si-implanted silicon nitride | ||||||
| dc.title | Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film | ||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- University of Electronic Science and Technology of China
- Nanyang Technological University
- null
- Institute of Materials Research and Engineering, A-Star, Singapore