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- Publisher Website: 10.1103/PhysRevB.76.153302
- Scopus: eid_2-s2.0-35148819154
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Article: Spin-current-induced charge accumulation and electric current in semiconductor nanostructures with Rashba spin-orbit coupling
Title | Spin-current-induced charge accumulation and electric current in semiconductor nanostructures with Rashba spin-orbit coupling |
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Authors | |
Issue Date | 2007 |
Publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ |
Citation | Physical Review B (Condensed Matter and Materials Physics), 2007, v. 76 n. 15, article no. 153302 How to Cite? |
Abstract | We demonstrate that the flow of a longitudinal spin current with different spin polarizations will induce different patterns of charge accumulation in a two-terminal strip, or electric current distribution in a four-terminal Hall-bar structure, of two-dimensional electron gas with Rashba spin-orbit coupling. For an in-plane polarized spin current, charges will accumulate either at the two lateral edges or around the center of the strip structure, while for an out-of-plane polarized spin current, charge densities will show opposite signs at the two lateral edges, leading to a Hall voltage. Our calculation offers a different route to experimentally detect or differentiate pure spin currents with various spin polarizations. © 2007 The American Physical Society. |
Persistent Identifier | http://hdl.handle.net/10722/80662 |
ISSN | 2014 Impact Factor: 3.736 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Li, J | en_HK |
dc.contributor.author | Shen, SQ | en_HK |
dc.date.accessioned | 2010-09-06T08:08:55Z | - |
dc.date.available | 2010-09-06T08:08:55Z | - |
dc.date.issued | 2007 | en_HK |
dc.identifier.citation | Physical Review B (Condensed Matter and Materials Physics), 2007, v. 76 n. 15, article no. 153302 | - |
dc.identifier.issn | 1098-0121 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80662 | - |
dc.description.abstract | We demonstrate that the flow of a longitudinal spin current with different spin polarizations will induce different patterns of charge accumulation in a two-terminal strip, or electric current distribution in a four-terminal Hall-bar structure, of two-dimensional electron gas with Rashba spin-orbit coupling. For an in-plane polarized spin current, charges will accumulate either at the two lateral edges or around the center of the strip structure, while for an out-of-plane polarized spin current, charge densities will show opposite signs at the two lateral edges, leading to a Hall voltage. Our calculation offers a different route to experimentally detect or differentiate pure spin currents with various spin polarizations. © 2007 The American Physical Society. | en_HK |
dc.language | eng | en_HK |
dc.publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ | en_HK |
dc.relation.ispartof | Physical Review B (Condensed Matter and Materials Physics) | - |
dc.title | Spin-current-induced charge accumulation and electric current in semiconductor nanostructures with Rashba spin-orbit coupling | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1474-7065&volume=76&spage=153302: 1&epage=4&date=2007&atitle=Spin-current-induced+charge+accumulation+and+electric+current+in+semiconductor+nanostructures+with+Rashba+spin-orbit+coupling | en_HK |
dc.identifier.email | Shen, SQ: sshen@hkucc.hku.hk | en_HK |
dc.identifier.authority | Shen, SQ=rp00775 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1103/PhysRevB.76.153302 | en_HK |
dc.identifier.scopus | eid_2-s2.0-35148819154 | en_HK |
dc.identifier.hkuros | 145569 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-35148819154&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 76 | en_HK |
dc.identifier.issue | 15 | en_HK |
dc.identifier.spage | article no. 153302 | - |
dc.identifier.epage | article no. 153302 | - |
dc.identifier.isi | WOS:000250620400010 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Li, J=26643417100 | en_HK |
dc.identifier.scopusauthorid | Shen, SQ=7403431266 | en_HK |
dc.identifier.issnl | 1098-0121 | - |