Article: Identities of the deep level defects E1/E2 in 6H silicon carbide

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TitleIdentities of the deep level defects E1/E2 in 6H silicon carbide
AuthorsLing, FCC
Chen, X
Gong, M
Weng, HM
Hang, DS
Beling, CD
Fung, SHY
Lam, TW
Lam, CH
Issue Date2004
PublisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
CitationMaterials Science Forum, 2004, v. 445-446, p. 135-137 [How to Cite?]
ISSN0255-5476
2011 SCImago Journal Rankings: 0.039
DC Field
Value
dc.contributor.authorLing, FCC
dc.contributor.authorChen, X
dc.contributor.authorGong, M
dc.contributor.authorWeng, HM
dc.contributor.authorHang, DS
dc.contributor.authorBeling, CD
dc.contributor.authorFung, SHY
dc.contributor.authorLam, TW
dc.contributor.authorLam, CH
dc.date.accessioned2010-09-06T08:08:34Z
dc.date.available2010-09-06T08:08:34Z
dc.date.issued2004
dc.identifier.citationMaterials Science Forum, 2004, v. 445-446, p. 135-137 [How to Cite?]
dc.identifier.hkuros85710
dc.identifier.issn0255-5476
2011 SCImago Journal Rankings: 0.039
dc.identifier.openurl
dc.identifier.urihttp://hdl.handle.net/10722/80630
dc.languageeng
dc.publisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
dc.relation.ispartofMaterials Science Forum
dc.rightsMaterials Science Forum. Copyright © Trans Tech Publications Ltd.
dc.titleIdentities of the deep level defects E1/E2 in 6H silicon carbide
dc.typeArticle