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Article: Leakage current induced drop in E f in pes studies of Schottky barrier formation

TitleLeakage current induced drop in E f in pes studies of Schottky barrier formation
Authors
Issue Date1994
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 1994, v. 89 n. 9, p. 779-781 How to Cite?
AbstractFor metals on n - type III - V semiconductor surfaces, a drop in the Fermi level is usually found in the photoemission experiments of Schottky barrier formation. In this letter, it is shown that the drop can be explained in terms of the breakdown of the photoemission - induced - photovoltage caused by the leakage current during the metallization process in the overlayer. A simulation to the published data of the drop is presented, and a quantitative relationship of the magnitude of the drop with the Schottky barrier height, temperature and photocurrent is predicted. © 1994.
Persistent Identifierhttp://hdl.handle.net/10722/80614
ISSN
2015 Impact Factor: 1.458
2015 SCImago Journal Rankings: 0.776

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-06T08:08:24Z-
dc.date.available2010-09-06T08:08:24Z-
dc.date.issued1994en_HK
dc.identifier.citationSolid State Communications, 1994, v. 89 n. 9, p. 779-781en_HK
dc.identifier.issn0038-1098en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80614-
dc.description.abstractFor metals on n - type III - V semiconductor surfaces, a drop in the Fermi level is usually found in the photoemission experiments of Schottky barrier formation. In this letter, it is shown that the drop can be explained in terms of the breakdown of the photoemission - induced - photovoltage caused by the leakage current during the metallization process in the overlayer. A simulation to the published data of the drop is presented, and a quantitative relationship of the magnitude of the drop with the Schottky barrier height, temperature and photocurrent is predicted. © 1994.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_HK
dc.relation.ispartofSolid State Communicationsen_HK
dc.titleLeakage current induced drop in E f in pes studies of Schottky barrier formationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0038-1098&volume=89&spage=779&epage=781&date=1994&atitle=Leakage+current+induced+drop+in+Ef+IN+PES+studies+of+Schottky-+Barrier+formationen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0028392258en_HK
dc.identifier.hkuros3305en_HK
dc.identifier.volume89en_HK
dc.identifier.issue9en_HK
dc.identifier.spage779en_HK
dc.identifier.epage781en_HK
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, TP=27169708800en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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