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Article: Ti ion valence variation induced by ionizing radiation at TiO2/Si interface

TitleTi ion valence variation induced by ionizing radiation at TiO2/Si interface
Authors
KeywordsIonizing radiation
TiO2/Si interface
Valence variation
Issue Date2002
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/surfcoat
Citation
Surface And Coatings Technology, 2002, v. 158-159, p. 238-241 How to Cite?
AbstractTitanium oxide films are prepared on silicon substrates by the DC reactive sputtering method. The TiO2/Si structures with different TiO2 film thickness are irradiated by electron beams and y-rays. It is found after irradiation that the shift of flat-band voltage △ VFB of MOS structures is very small. There is no evident distortion in the HF C-V curves in comparison with pre irradiation cases. By the XPS analysis, it is found that, after irradiation, the valence of the Ti ion varies; the Ti3+ ion increases and the Ti4+ ion clearly decreases at the TiO2/Si interface. The variation comes mainly from the transition layer between the titanium oxide film and silicon substrate. The mechanism has been discussed in detail. © 2002 Elsevier Science B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80605
ISSN
2015 Impact Factor: 2.139
2015 SCImago Journal Rankings: 0.872
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhang, JDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLiBin, Len_HK
dc.contributor.authorZhiJun, Len_HK
dc.date.accessioned2010-09-06T08:08:18Z-
dc.date.available2010-09-06T08:08:18Z-
dc.date.issued2002en_HK
dc.identifier.citationSurface And Coatings Technology, 2002, v. 158-159, p. 238-241en_HK
dc.identifier.issn0257-8972en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80605-
dc.description.abstractTitanium oxide films are prepared on silicon substrates by the DC reactive sputtering method. The TiO2/Si structures with different TiO2 film thickness are irradiated by electron beams and y-rays. It is found after irradiation that the shift of flat-band voltage △ VFB of MOS structures is very small. There is no evident distortion in the HF C-V curves in comparison with pre irradiation cases. By the XPS analysis, it is found that, after irradiation, the valence of the Ti ion varies; the Ti3+ ion increases and the Ti4+ ion clearly decreases at the TiO2/Si interface. The variation comes mainly from the transition layer between the titanium oxide film and silicon substrate. The mechanism has been discussed in detail. © 2002 Elsevier Science B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/surfcoaten_HK
dc.relation.ispartofSurface and Coatings Technologyen_HK
dc.subjectIonizing radiationen_HK
dc.subjectTiO2/Si interfaceen_HK
dc.subjectValence variationen_HK
dc.titleTi ion valence variation induced by ionizing radiation at TiO2/Si interfaceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0257-8972&volume=158-159&spage=238&epage=241&date=2002&atitle=Ti+ion+valence+variation+induced+by+ionizing+radiation+at+TiO2/Si+interfaceen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0257-8972(02)00218-9en_HK
dc.identifier.scopuseid_2-s2.0-17144439242en_HK
dc.identifier.hkuros74807en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-17144439242&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume158-159en_HK
dc.identifier.spage238en_HK
dc.identifier.epage241en_HK
dc.identifier.isiWOS:000178482100044-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridZhang, JD=8555988600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLiBin, L=7404131071en_HK
dc.identifier.scopusauthoridZhiJun, L=15827065300en_HK

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