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Article: Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide

TitlePositron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide
Authors
Issue Date2004
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
Citation
Journal Of Physics Condensed Matter, 2004, v. 16 n. 46, p. 8409-8419 How to Cite?
AbstractThe positron lifetime technique was employed to study vacancy-type defects in 8MeV electron-irradiated n-type 6H silicon carbide. A long-lifetime component having a characteristic lifetime of 223-232 ps was observed in the irradiated sample and was attributed to the V cV Si divacancy. Other positron traps, which dominated at low temperatures, were observed to compete with the V cV Si for trapping positrons. A positron trapping model involving a positron shallow trap, a negatively charged monovacancy and the V cV Si divacancy was found to give a good description of the temperature-dependent positron lifetime data of the 1200 °C annealed sample. The identity of the monovacancy could not be unambiguously determined, but its lifetime was found to be in the range 160-172ps.
Persistent Identifierhttp://hdl.handle.net/10722/80574
ISSN
2015 Impact Factor: 2.209
2015 SCImago Journal Rankings: 0.812
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLam, CHen_HK
dc.contributor.authorLam, TWen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorDeSheng, Hen_HK
dc.contributor.authorHuimin, Wen_HK
dc.date.accessioned2010-09-06T08:07:57Z-
dc.date.available2010-09-06T08:07:57Z-
dc.date.issued2004en_HK
dc.identifier.citationJournal Of Physics Condensed Matter, 2004, v. 16 n. 46, p. 8409-8419en_HK
dc.identifier.issn0953-8984en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80574-
dc.description.abstractThe positron lifetime technique was employed to study vacancy-type defects in 8MeV electron-irradiated n-type 6H silicon carbide. A long-lifetime component having a characteristic lifetime of 223-232 ps was observed in the irradiated sample and was attributed to the V cV Si divacancy. Other positron traps, which dominated at low temperatures, were observed to compete with the V cV Si for trapping positrons. A positron trapping model involving a positron shallow trap, a negatively charged monovacancy and the V cV Si divacancy was found to give a good description of the temperature-dependent positron lifetime data of the 1200 °C annealed sample. The identity of the monovacancy could not be unambiguously determined, but its lifetime was found to be in the range 160-172ps.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcmen_HK
dc.relation.ispartofJournal of Physics Condensed Matteren_HK
dc.titlePositron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbideen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0953-8984&volume=16&spage=8409&epage=8419&date=2004&atitle=Positron+lifetime+studies+on+8+MeV+electron-irradiated+n-type+6H+silicon+carbideen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0953-8984/16/46/026en_HK
dc.identifier.scopuseid_2-s2.0-9944221018en_HK
dc.identifier.hkuros96349en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-9944221018&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue46en_HK
dc.identifier.spage8409en_HK
dc.identifier.epage8419en_HK
dc.identifier.isiWOS:000225706000029-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLam, CH=24525955200en_HK
dc.identifier.scopusauthoridLam, TW=35334634100en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridDeSheng, H=6504246451en_HK
dc.identifier.scopusauthoridHuimin, W=7801680119en_HK

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