Article: Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide

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TitlePositron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide
AuthorsLam, CH2
Lam, TW2
Ling, CC2
Fung, S2
Beling, CD2
DeSheng, H1
Huimin, W3
Issue Date2004
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
CitationJournal Of Physics Condensed Matter, 2004, v. 16 n. 46, p. 8409-8419 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0953-8984/16/46/026
AbstractThe positron lifetime technique was employed to study vacancy-type defects in 8MeV electron-irradiated n-type 6H silicon carbide. A long-lifetime component having a characteristic lifetime of 223-232 ps was observed in the irradiated sample and was attributed to the V cV Si divacancy. Other positron traps, which dominated at low temperatures, were observed to compete with the V cV Si for trapping positrons. A positron trapping model involving a positron shallow trap, a negatively charged monovacancy and the V cV Si divacancy was found to give a good description of the temperature-dependent positron lifetime data of the 1200 °C annealed sample. The identity of the monovacancy could not be unambiguously determined, but its lifetime was found to be in the range 160-172ps.
ISSN0953-8984
2011 Impact Factor: 2.546
2011 SCImago Journal Rankings: 0.124
DOIhttp://dx.doi.org/10.1088/0953-8984/16/46/026
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorLam, CH
dc.contributor.authorLam, TW
dc.contributor.authorLing, CC
dc.contributor.authorFung, S
dc.contributor.authorBeling, CD
dc.contributor.authorDeSheng, H
dc.contributor.authorHuimin, W
dc.date.accessioned2010-09-06T08:07:57Z
dc.date.available2010-09-06T08:07:57Z
dc.date.issued2004
dc.description.abstractThe positron lifetime technique was employed to study vacancy-type defects in 8MeV electron-irradiated n-type 6H silicon carbide. A long-lifetime component having a characteristic lifetime of 223-232 ps was observed in the irradiated sample and was attributed to the V cV Si divacancy. Other positron traps, which dominated at low temperatures, were observed to compete with the V cV Si for trapping positrons. A positron trapping model involving a positron shallow trap, a negatively charged monovacancy and the V cV Si divacancy was found to give a good description of the temperature-dependent positron lifetime data of the 1200 °C annealed sample. The identity of the monovacancy could not be unambiguously determined, but its lifetime was found to be in the range 160-172ps.
dc.description.natureLink_to_subscribed_fulltext
dc.identifier.citationJournal Of Physics Condensed Matter, 2004, v. 16 n. 46, p. 8409-8419 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0953-8984/16/46/026
dc.identifier.doihttp://dx.doi.org/10.1088/0953-8984/16/46/026
dc.identifier.epage8419
dc.identifier.hkuros96349
dc.identifier.isiWOS:000225706000029
dc.identifier.issn0953-8984
2011 Impact Factor: 2.546
2011 SCImago Journal Rankings: 0.124
dc.identifier.issue46
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-9944221018
dc.identifier.spage8409
dc.identifier.urihttp://hdl.handle.net/10722/80574
dc.identifier.volume16
dc.languageeng
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
dc.publisher.placeUnited Kingdom
dc.relation.ispartofJournal of Physics Condensed Matter
dc.relation.referencesReferences in Scopus
dc.titlePositron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide
dc.typeArticle
Author Affiliations
  1. Nanjing University
  2. The University of Hong Kong
  3. University of Science and Technology of China