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Article: Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide
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TitlePositron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide
 
AuthorsLam, CH2
Lam, TW2
Ling, CC2
Fung, S2
Beling, CD2
DeSheng, H1
Huimin, W3
 
Issue Date2004
 
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
 
CitationJournal Of Physics Condensed Matter, 2004, v. 16 n. 46, p. 8409-8419 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0953-8984/16/46/026
 
AbstractThe positron lifetime technique was employed to study vacancy-type defects in 8MeV electron-irradiated n-type 6H silicon carbide. A long-lifetime component having a characteristic lifetime of 223-232 ps was observed in the irradiated sample and was attributed to the V cV Si divacancy. Other positron traps, which dominated at low temperatures, were observed to compete with the V cV Si for trapping positrons. A positron trapping model involving a positron shallow trap, a negatively charged monovacancy and the V cV Si divacancy was found to give a good description of the temperature-dependent positron lifetime data of the 1200 °C annealed sample. The identity of the monovacancy could not be unambiguously determined, but its lifetime was found to be in the range 160-172ps.
 
ISSN0953-8984
2013 Impact Factor: 2.223
 
DOIhttp://dx.doi.org/10.1088/0953-8984/16/46/026
 
ISI Accession Number IDWOS:000225706000029
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorLam, CH
 
dc.contributor.authorLam, TW
 
dc.contributor.authorLing, CC
 
dc.contributor.authorFung, S
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorDeSheng, H
 
dc.contributor.authorHuimin, W
 
dc.date.accessioned2010-09-06T08:07:57Z
 
dc.date.available2010-09-06T08:07:57Z
 
dc.date.issued2004
 
dc.description.abstractThe positron lifetime technique was employed to study vacancy-type defects in 8MeV electron-irradiated n-type 6H silicon carbide. A long-lifetime component having a characteristic lifetime of 223-232 ps was observed in the irradiated sample and was attributed to the V cV Si divacancy. Other positron traps, which dominated at low temperatures, were observed to compete with the V cV Si for trapping positrons. A positron trapping model involving a positron shallow trap, a negatively charged monovacancy and the V cV Si divacancy was found to give a good description of the temperature-dependent positron lifetime data of the 1200 °C annealed sample. The identity of the monovacancy could not be unambiguously determined, but its lifetime was found to be in the range 160-172ps.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationJournal Of Physics Condensed Matter, 2004, v. 16 n. 46, p. 8409-8419 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0953-8984/16/46/026
 
dc.identifier.doihttp://dx.doi.org/10.1088/0953-8984/16/46/026
 
dc.identifier.epage8419
 
dc.identifier.hkuros96349
 
dc.identifier.isiWOS:000225706000029
 
dc.identifier.issn0953-8984
2013 Impact Factor: 2.223
 
dc.identifier.issue46
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-9944221018
 
dc.identifier.spage8409
 
dc.identifier.urihttp://hdl.handle.net/10722/80574
 
dc.identifier.volume16
 
dc.languageeng
 
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
 
dc.publisher.placeUnited Kingdom
 
dc.relation.ispartofJournal of Physics Condensed Matter
 
dc.relation.referencesReferences in Scopus
 
dc.titlePositron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide
 
dc.typeArticle
 
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Author Affiliations
  1. Nanjing University
  2. The University of Hong Kong
  3. University of Science and Technology of China