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Article: Photoluminescence study of beryllium implantation induced intrinsic defects in 6H-silicon carbide

TitlePhotoluminescence study of beryllium implantation induced intrinsic defects in 6H-silicon carbide
Authors
Keywords6H-SiC
Beryllium
Defects
Implantation
Photoluminescence
Issue Date2001
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb
Citation
Physica B: Condensed Matter, 2001, v. 308-310, p. 710-713 How to Cite?
AbstractBeryllium was implanted into both n- and p-type 6H-SiC and the samples were subsequently annealed at 1600°C. Photoluminescence (PL) measurements were performed and PL lines at 420 and 472nm were observed. The PL lines at around 420nm have been detected from various ion implanted SiC samples and have been attributed to transitions involving some implantation induced intrinsic defect labeled as DII. The present observation of the PL lines at 420nm from Be implanted 6H-SiC supports the intrinsic model that DII might be a carbon-di-interstitial defect. The lines at 472nm labeled as DI in the PL spectra have previously been identified as divacancy defect (VSi-VC). We note that it was suggested that the electron traps labeled Z1/Z2 observed in deep level transient spectroscopy (DLTS) were due to the same divacancy defect. In our experiments, while the DI series PL lines are prominent, DLTS results from the same samples show no Z1/Z2 related peaks. The PL and DLTS results seem to be against the possibility that Z1/Z2 arise from the same defect. © 2001 Elsevier Science B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80562
ISSN
2015 Impact Factor: 1.352
2015 SCImago Journal Rankings: 0.509
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorLi, Qen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorHenkel, Ten_HK
dc.contributor.authorTanoue, Hen_HK
dc.contributor.authorKobayashi, Nen_HK
dc.date.accessioned2010-09-06T08:07:49Z-
dc.date.available2010-09-06T08:07:49Z-
dc.date.issued2001en_HK
dc.identifier.citationPhysica B: Condensed Matter, 2001, v. 308-310, p. 710-713en_HK
dc.identifier.issn0921-4526en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80562-
dc.description.abstractBeryllium was implanted into both n- and p-type 6H-SiC and the samples were subsequently annealed at 1600°C. Photoluminescence (PL) measurements were performed and PL lines at 420 and 472nm were observed. The PL lines at around 420nm have been detected from various ion implanted SiC samples and have been attributed to transitions involving some implantation induced intrinsic defect labeled as DII. The present observation of the PL lines at 420nm from Be implanted 6H-SiC supports the intrinsic model that DII might be a carbon-di-interstitial defect. The lines at 472nm labeled as DI in the PL spectra have previously been identified as divacancy defect (VSi-VC). We note that it was suggested that the electron traps labeled Z1/Z2 observed in deep level transient spectroscopy (DLTS) were due to the same divacancy defect. In our experiments, while the DI series PL lines are prominent, DLTS results from the same samples show no Z1/Z2 related peaks. The PL and DLTS results seem to be against the possibility that Z1/Z2 arise from the same defect. © 2001 Elsevier Science B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physben_HK
dc.relation.ispartofPhysica B: Condensed Matteren_HK
dc.rightsPhysica B: Condensed Matter. Copyright © Elsevier BV.en_HK
dc.subject6H-SiCen_HK
dc.subjectBerylliumen_HK
dc.subjectDefectsen_HK
dc.subjectImplantationen_HK
dc.subjectPhotoluminescenceen_HK
dc.titlePhotoluminescence study of beryllium implantation induced intrinsic defects in 6H-silicon carbideen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0921-4526&volume=308-310&spage=710&epage=713&date=2001&atitle=Photoluminescence+study+of+beryllium+implantation+induced+intrinsic+defects+in+6H-silicon+carbideen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0921-4526(01)00878-Xen_HK
dc.identifier.scopuseid_2-s2.0-0035670944en_HK
dc.identifier.hkuros65693en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035670944&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume308-310en_HK
dc.identifier.spage710en_HK
dc.identifier.epage713en_HK
dc.identifier.isiWOS:000173660100178-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridHuang, Y=26643004400en_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridHenkel, T=7007164479en_HK
dc.identifier.scopusauthoridTanoue, H=7006255463en_HK
dc.identifier.scopusauthoridKobayashi, N=7404311470en_HK

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