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Article: Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals

TitleLight-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals
Authors
Liu, ZChen, TPLiu, YDing, LYang, MWong, JICen, ZHLi, YBZhang, SFung, S
KeywordsAluminum compounds
Charge trapping
Electric conductance
Magnetron sputtering
Nanocrystals
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 1, article no. 013102 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2828691
AbstractAl nanocrystals (nc-Al) embedded in AlN thin films have been synthesized by rf magnetron sputtering. The influence of ultraviolet (UV) illumination on electrical characteristics of the nc- AlAlN thin film system has been investigated. It is shown that the UV illumination could lead to a random change in the conductance of the thin film system. The change in the conductance is attributed to the charge trapping and detrapping in the nc-Al due to the UV illumination. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80558
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000252284200132
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLiu, Zen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorCen, ZHen_HK
dc.contributor.authorLi, YBen_HK
dc.contributor.authorZhang, Sen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:07:46Z-
dc.date.available2010-09-06T08:07:46Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 1, article no. 013102-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80558-
dc.description.abstractAl nanocrystals (nc-Al) embedded in AlN thin films have been synthesized by rf magnetron sputtering. The influence of ultraviolet (UV) illumination on electrical characteristics of the nc- AlAlN thin film system has been investigated. It is shown that the UV illumination could lead to a random change in the conductance of the thin film system. The change in the conductance is attributed to the charge trapping and detrapping in the nc-Al due to the UV illumination. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2008, v. 92 n. 1, article no. 013102 and may be found at https://doi.org/10.1063/1.2828691-
dc.subjectAluminum compounds-
dc.subjectCharge trapping-
dc.subjectElectric conductance-
dc.subjectMagnetron sputtering-
dc.subjectNanocrystals-
dc.titleLight-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystalsen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2828691en_HK
dc.identifier.scopuseid_2-s2.0-38049010867en_HK
dc.identifier.hkuros140636en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-38049010867&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue1en_HK
dc.identifier.spagearticle no. 013102-
dc.identifier.epagearticle no. 013102-
dc.identifier.isiWOS:000252284200132-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Z=7406680497en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridCen, ZH=23098969400en_HK
dc.identifier.scopusauthoridLi, YB=7502093091en_HK
dc.identifier.scopusauthoridZhang, S=7409376020en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0003-6951-

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