File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Strong screening effect of photo-generated carriers on piezoelectric field in In0.13Ga0.87N/In0.03Ga0.97N quantum wells

TitleStrong screening effect of photo-generated carriers on piezoelectric field in In0.13Ga0.87N/In0.03Ga0.97N quantum wells
Authors
KeywordsGaN
InGaN
Piezoelectric field
Quantum confined Stark effect
Quantum well
Issue Date2002
PublisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htm
Citation
Japanese Journal Of Applied Physics, Part 2: Letters, 2002, v. 41 n. 10 A, p. L1093-L1095 How to Cite?
AbstractWe report the strong screening effect of photo-generated carriers on piezoelectric field induced by lattice mismatch strain in In0.13Ga0.87N/In0.03Ga0.97N multiple quantum wells. Blue shifts as large as 83 meV and 120 meV of intrinsic transitions at 4 K and 80 K, respectively, are observed when excitation power is increased by two orders of magnitude. Self-consistent numerical calculations were carried out that involved simultaneously solving Schrödinger's and Poisson's equations in order to interpret the experimental data. Efficient screening of the huge piezoelectric field by photo-generated carriers in quantum well regions is demonstrated both experimentally and theoretically.
Persistent Identifierhttp://hdl.handle.net/10722/80555
ISSN
2015 Impact Factor: 1.122
2015 SCImago Journal Rankings: 0.258
References

 

DC FieldValueLanguage
dc.contributor.authorLi, Qen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.contributor.authorZhang, XHen_HK
dc.contributor.authorLiu, Wen_HK
dc.contributor.authorChua, SJen_HK
dc.date.accessioned2010-09-06T08:07:44Z-
dc.date.available2010-09-06T08:07:44Z-
dc.date.issued2002en_HK
dc.identifier.citationJapanese Journal Of Applied Physics, Part 2: Letters, 2002, v. 41 n. 10 A, p. L1093-L1095en_HK
dc.identifier.issn0021-4922en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80555-
dc.description.abstractWe report the strong screening effect of photo-generated carriers on piezoelectric field induced by lattice mismatch strain in In0.13Ga0.87N/In0.03Ga0.97N multiple quantum wells. Blue shifts as large as 83 meV and 120 meV of intrinsic transitions at 4 K and 80 K, respectively, are observed when excitation power is increased by two orders of magnitude. Self-consistent numerical calculations were carried out that involved simultaneously solving Schrödinger's and Poisson's equations in order to interpret the experimental data. Efficient screening of the huge piezoelectric field by photo-generated carriers in quantum well regions is demonstrated both experimentally and theoretically.en_HK
dc.languageengen_HK
dc.publisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htmen_HK
dc.relation.ispartofJapanese Journal of Applied Physics, Part 2: Lettersen_HK
dc.subjectGaNen_HK
dc.subjectInGaNen_HK
dc.subjectPiezoelectric fielden_HK
dc.subjectQuantum confined Stark effecten_HK
dc.subjectQuantum wellen_HK
dc.titleStrong screening effect of photo-generated carriers on piezoelectric field in In0.13Ga0.87N/In0.03Ga0.97N quantum wellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-4922&volume=41&spage=L1093&epage=L1095 &date=2002&atitle=Strong+screening+effect+of+photo-generated+carriers+on+piezoelectric+field+in+In0.13Ga0.87N/In0.03Ga0.97N+quantum+wellsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0036814905en_HK
dc.identifier.hkuros74827en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036814905&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume41en_HK
dc.identifier.issue10 Aen_HK
dc.identifier.spageL1093en_HK
dc.identifier.epageL1095en_HK
dc.publisher.placeJapanen_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.scopusauthoridZhang, XH=13006006900en_HK
dc.identifier.scopusauthoridLiu, W=36078712200en_HK
dc.identifier.scopusauthoridChua, SJ=35516064500en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats