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Article: Strong screening effect of photo-generated carriers on piezoelectric field in In0.13Ga0.87N/In0.03Ga0.97N quantum wells

TitleStrong screening effect of photo-generated carriers on piezoelectric field in In0.13Ga0.87N/In0.03Ga0.97N quantum wells
Authors
Li, QXu, SJXie, MHTong, SYZhang, XHLiu, WChua, SJ
KeywordsGaN
InGaN
Piezoelectric field
Quantum confined Stark effect
Quantum well
Issue Date2002
PublisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htm
Citation
Japanese Journal Of Applied Physics, Part 2: Letters, 2002, v. 41 n. 10 A, p. L1093-L1095 How to Cite?
AbstractWe report the strong screening effect of photo-generated carriers on piezoelectric field induced by lattice mismatch strain in In0.13Ga0.87N/In0.03Ga0.97N multiple quantum wells. Blue shifts as large as 83 meV and 120 meV of intrinsic transitions at 4 K and 80 K, respectively, are observed when excitation power is increased by two orders of magnitude. Self-consistent numerical calculations were carried out that involved simultaneously solving Schrödinger's and Poisson's equations in order to interpret the experimental data. Efficient screening of the huge piezoelectric field by photo-generated carriers in quantum well regions is demonstrated both experimentally and theoretically.
Persistent Identifierhttp://hdl.handle.net/10722/80555
ISSN
0021-4922
2023 Impact Factor: 1.5
2023 SCImago Journal Rankings: 0.307
ISI Accession Number ID
WOS:000179893800023
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, Qen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.contributor.authorZhang, XHen_HK
dc.contributor.authorLiu, Wen_HK
dc.contributor.authorChua, SJen_HK
dc.date.accessioned2010-09-06T08:07:44Z-
dc.date.available2010-09-06T08:07:44Z-
dc.date.issued2002en_HK
dc.identifier.citationJapanese Journal Of Applied Physics, Part 2: Letters, 2002, v. 41 n. 10 A, p. L1093-L1095en_HK
dc.identifier.issn0021-4922en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80555-
dc.description.abstractWe report the strong screening effect of photo-generated carriers on piezoelectric field induced by lattice mismatch strain in In0.13Ga0.87N/In0.03Ga0.97N multiple quantum wells. Blue shifts as large as 83 meV and 120 meV of intrinsic transitions at 4 K and 80 K, respectively, are observed when excitation power is increased by two orders of magnitude. Self-consistent numerical calculations were carried out that involved simultaneously solving Schrödinger's and Poisson's equations in order to interpret the experimental data. Efficient screening of the huge piezoelectric field by photo-generated carriers in quantum well regions is demonstrated both experimentally and theoretically.en_HK
dc.languageengen_HK
dc.publisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htmen_HK
dc.relation.ispartofJapanese Journal of Applied Physics, Part 2: Lettersen_HK
dc.subjectGaNen_HK
dc.subjectInGaNen_HK
dc.subjectPiezoelectric fielden_HK
dc.subjectQuantum confined Stark effecten_HK
dc.subjectQuantum wellen_HK
dc.titleStrong screening effect of photo-generated carriers on piezoelectric field in In0.13Ga0.87N/In0.03Ga0.97N quantum wellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-4922&volume=41&spage=L1093&epage=L1095 &date=2002&atitle=Strong+screening+effect+of+photo-generated+carriers+on+piezoelectric+field+in+In0.13Ga0.87N/In0.03Ga0.97N+quantum+wellsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0036814905en_HK
dc.identifier.hkuros74827en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036814905&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume41en_HK
dc.identifier.issue10 Aen_HK
dc.identifier.spageL1093en_HK
dc.identifier.epageL1095en_HK
dc.identifier.isiWOS:000179893800023-
dc.publisher.placeJapanen_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.scopusauthoridZhang, XH=13006006900en_HK
dc.identifier.scopusauthoridLiu, W=36078712200en_HK
dc.identifier.scopusauthoridChua, SJ=35516064500en_HK
dc.identifier.issnl0021-4922-

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